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Predictive physical model of cosmic-radiation-induced failures of power devices

  • Technical University of Munich
  • Infineon Technologies AG

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

In the last ten years, the hardening of silicon high power devices against cosmic-radiation-induced failure gained decisive importance. A systematic improvement of the robustness against cosmic radiation requires a fundamental physical understanding of the microscopic mechanisms which lead to the failure or even destruction of power devices. We performed detailed 3D thermo-electrical device simulations to study the local self-heating in the device in order to explain the failure and destruction mechanisms and compared the results with experimental data obtained from nucleon irradiation experiments. Several diode designs with varying doping concentration and vertical size of the device were investigated.

Original languageEnglish
Title of host publication15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe
PagesLS2e.31-LS2e.35
DOIs
StatePublished - 2012
Event15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe - Novi Sad, Serbia
Duration: 4 Sep 20126 Sep 2012

Publication series

Name15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe

Conference

Conference15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe
Country/TerritorySerbia
CityNovi Sad
Period4/09/126/09/12

Keywords

  • cosmic radiation
  • electro-thermal device simulation
  • silicon power devices

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