Abstract
In literature a model was described for the simulation of the breakdown behaviour of SF6. As input parameters, results from swarm experiments - the critical field strength and the effective ionization coefficient - and thermodynamic properties are sufficient. Recently it was shown that it is possible to transfer this model to another strongly attaching gas. In this contribution the model is applied to tetrafluoromethane (CF4), which has a smaller critical field strength and is less attaching than SF6. Furthermore, the breakdown field strengths of alternating and lightning impulse voltages of different field configurations - from homogeneous to inhomogeneous fields - are predicted for CF4. A comparison to experimental results from the literature shows good agreement. Thus, the model is applicable not only to predict partial discharges and breakdown voltages in strongly attaching gases but also to gases less attaching than SF6.
| Original language | English |
|---|---|
| Article number | 055207 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 48 |
| Issue number | 5 |
| DOIs | |
| State | Published - 11 Feb 2015 |
| Externally published | Yes |
Keywords
- arbitrary geometries
- breakdown voltages
- modelling
- partial discharges
- tetrafluoromethane (CF4)
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