Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N3)2Ga{N[CH2CH2(NEt 2)]2}

Harald Sussek; Oliver Stark; Anjana Devi; Hans Pritzkow; Roland A. Fischer

doi:10.1016/S0022-328X(00)00114-5

Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt ₂)]₂}

Harald Sussek
, Oliver Stark
, Anjana Devi
, Hans Pritzkow
, Roland A. Fischer

Heidelberg University
Max-Planck-lnstitut für Kohlenforschung

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

New intramolecularly Lewis-base-stabilized halogeno alanes, gallanes and indanes of the general formula (X)₂M{N[(CH₂)_n(R′)₂] ₂} (1-6) and (X)₂M{N(Et)[(CH₂)₂N(R′)₂]} (7-9) (n=2, 3; R′=Me, Et; X=Cl, Br; E=Al, Ga and In) as well as the azido derivatives (N₃)₂Ga{N[(CH₂)₂N(Et)₂]} (10) and (N₃)₂Ga{N(Et)[(CH₂)₂N(Me) ₂]} (11) as representative examples of the homologous series were synthesised via standard salt metathesis routes and fully characterised by means of elemental analysis, NMR and IR spectroscopy. Compounds 1, 2, 3 and 10 were studied by X-ray crystallography revealing monomeric structures in the solid state. Compound 10 allowed the growth of crystalline GaN thin films on sapphire substrates at 750°C in the absence of ammonia using the technique of organometallic chemical vapour deposition at reduced pressure. The films were analysed by XRD and Raman spectroscopy showing a preferred orientation of the crystallites perpendicular to the c-plane of the sapphire substrate.

Original language	English
Pages (from-to)	29-36
Number of pages	8
Journal	Journal of Organometallic Chemistry
Volume	602
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-328X(00)00114-5
State	Published - 15 May 2000
Externally published	Yes

Keywords

Aluminum
Amide
Azide
Gallium
Gallium nitride
Indium
Intramolecular adduct
OMCVD

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Sussek, H., Stark, O., Devi, A., Pritzkow, H., & Fischer, R. A. (2000). Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt ₂)]₂}. Journal of Organometallic Chemistry, 602(1-2), 29-36. https://doi.org/10.1016/S0022-328X(00)00114-5

Sussek, Harald ; Stark, Oliver ; Devi, Anjana et al. / Precursor chemistry of Group III nitrides : Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt ₂)]₂}. In: Journal of Organometallic Chemistry. 2000 ; Vol. 602, No. 1-2. pp. 29-36.

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title = "Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N3)2Ga\{N[CH2CH2(NEt 2)]2\}",

abstract = "New intramolecularly Lewis-base-stabilized halogeno alanes, gallanes and indanes of the general formula (X)2M\{N[(CH2)n(R′)2] 2\} (1-6) and (X)2M\{N(Et)[(CH2)2N(R′)2]\} (7-9) (n=2, 3; R′=Me, Et; X=Cl, Br; E=Al, Ga and In) as well as the azido derivatives (N3)2Ga\{N[(CH2)2N(Et)2]\} (10) and (N3)2Ga\{N(Et)[(CH2)2N(Me) 2]\} (11) as representative examples of the homologous series were synthesised via standard salt metathesis routes and fully characterised by means of elemental analysis, NMR and IR spectroscopy. Compounds 1, 2, 3 and 10 were studied by X-ray crystallography revealing monomeric structures in the solid state. Compound 10 allowed the growth of crystalline GaN thin films on sapphire substrates at 750°C in the absence of ammonia using the technique of organometallic chemical vapour deposition at reduced pressure. The films were analysed by XRD and Raman spectroscopy showing a preferred orientation of the crystallites perpendicular to the c-plane of the sapphire substrate.",

keywords = "Aluminum, Amide, Azide, Gallium, Gallium nitride, Indium, Intramolecular adduct, OMCVD",

author = "Harald Sussek and Oliver Stark and Anjana Devi and Hans Pritzkow and Fischer, \{Roland A.\}",

note = "Funding Information: The authors thank the VW-Stiftung for generous support. Grant no. I 72-567. One of the authors (A.D.) thanks the Alexander von Humboldt foundation for the post-doctoral fellowship.",

year = "2000",

month = may,

day = "15",

doi = "10.1016/S0022-328X(00)00114-5",

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Sussek, H, Stark, O, Devi, A, Pritzkow, H & Fischer, RA 2000, 'Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt ₂)]₂}', Journal of Organometallic Chemistry, vol. 602, no. 1-2, pp. 29-36. https://doi.org/10.1016/S0022-328X(00)00114-5

Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt ₂)]₂}. / Sussek, Harald; Stark, Oliver; Devi, Anjana et al.
In: Journal of Organometallic Chemistry, Vol. 602, No. 1-2, 15.05.2000, p. 29-36.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Precursor chemistry of Group III nitrides

T2 - Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N3)2Ga{N[CH2CH2(NEt 2)]2}

AU - Sussek, Harald

AU - Stark, Oliver

AU - Devi, Anjana

AU - Pritzkow, Hans

AU - Fischer, Roland A.

N1 - Funding Information: The authors thank the VW-Stiftung for generous support. Grant no. I 72-567. One of the authors (A.D.) thanks the Alexander von Humboldt foundation for the post-doctoral fellowship.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - New intramolecularly Lewis-base-stabilized halogeno alanes, gallanes and indanes of the general formula (X)2M{N[(CH2)n(R′)2] 2} (1-6) and (X)2M{N(Et)[(CH2)2N(R′)2]} (7-9) (n=2, 3; R′=Me, Et; X=Cl, Br; E=Al, Ga and In) as well as the azido derivatives (N3)2Ga{N[(CH2)2N(Et)2]} (10) and (N3)2Ga{N(Et)[(CH2)2N(Me) 2]} (11) as representative examples of the homologous series were synthesised via standard salt metathesis routes and fully characterised by means of elemental analysis, NMR and IR spectroscopy. Compounds 1, 2, 3 and 10 were studied by X-ray crystallography revealing monomeric structures in the solid state. Compound 10 allowed the growth of crystalline GaN thin films on sapphire substrates at 750°C in the absence of ammonia using the technique of organometallic chemical vapour deposition at reduced pressure. The films were analysed by XRD and Raman spectroscopy showing a preferred orientation of the crystallites perpendicular to the c-plane of the sapphire substrate.

AB - New intramolecularly Lewis-base-stabilized halogeno alanes, gallanes and indanes of the general formula (X)2M{N[(CH2)n(R′)2] 2} (1-6) and (X)2M{N(Et)[(CH2)2N(R′)2]} (7-9) (n=2, 3; R′=Me, Et; X=Cl, Br; E=Al, Ga and In) as well as the azido derivatives (N3)2Ga{N[(CH2)2N(Et)2]} (10) and (N3)2Ga{N(Et)[(CH2)2N(Me) 2]} (11) as representative examples of the homologous series were synthesised via standard salt metathesis routes and fully characterised by means of elemental analysis, NMR and IR spectroscopy. Compounds 1, 2, 3 and 10 were studied by X-ray crystallography revealing monomeric structures in the solid state. Compound 10 allowed the growth of crystalline GaN thin films on sapphire substrates at 750°C in the absence of ammonia using the technique of organometallic chemical vapour deposition at reduced pressure. The films were analysed by XRD and Raman spectroscopy showing a preferred orientation of the crystallites perpendicular to the c-plane of the sapphire substrate.

KW - Aluminum

KW - Amide

KW - Azide

KW - Gallium

KW - Gallium nitride

KW - Indium

KW - Intramolecular adduct

KW - OMCVD

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U2 - 10.1016/S0022-328X(00)00114-5

DO - 10.1016/S0022-328X(00)00114-5

M3 - Article

AN - SCOPUS:0001900253

SN - 0022-328X

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JO - Journal of Organometallic Chemistry

JF - Journal of Organometallic Chemistry

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ER -

Sussek H, Stark O, Devi A, Pritzkow H, Fischer RA. Precursor chemistry of Group III nitrides: Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordination sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt ₂)]₂}. Journal of Organometallic Chemistry. 2000 May 15;602(1-2):29-36. doi: 10.1016/S0022-328X(00)00114-5