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Precise laser fault injections into 90 nm and 45 nm SRAM-cells

  • Bodo Selmke
  • , Stefan Brummer
  • , Johann Heyszl
  • , Georg Sigl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

41 Scopus citations

Abstract

In the area of fault attacks, lasers are a common method to inject faults into an integrated circuit. Against the background of decreasing structure sizes in ICs, it is of interest which fault model can be met with state of the art equipment. We investigate laser-based fault injections into the SRAM-cells of block RAMs of two different FPGAs with 90nm and 45 nm feature size respectively. Our results show that individual bit manipulations are feasible for both, the 90nm chip and the 45 nm chip, but with limitations for the latter. To the best of our knowledge, we are the first to investigate laser fault injections into 45nm technology nodes. We provide detailed insights of our laser equipment and the parameters of our setup to give a comparison base for further research.

Original languageEnglish
Title of host publicationSmart Card Research and Advanced Applications - 14th International Conference, CARDIS 2015, Revised Selected Papers
EditorsNaofumi Homma, Marcel Medwed
PublisherSpringer Verlag
Pages193-205
Number of pages13
ISBN (Print)9783319312705
DOIs
StatePublished - 2016
Event14th International Conference on Smart Card Research and Advanced Application, CARDIS 2015 - Bochum, Germany
Duration: 4 Nov 20156 Nov 2015

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume9514
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Conference

Conference14th International Conference on Smart Card Research and Advanced Application, CARDIS 2015
Country/TerritoryGermany
CityBochum
Period4/11/156/11/15

Keywords

  • Comparing 45 nm and 90nm
  • High-precision
  • Laser-based fault injection
  • SRAM

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