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Precise control of Jeff= 12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

  • Stephan Geprags
  • , Björn Erik Skovdal
  • , Monika Scheufele
  • , Matthias Opel
  • , Didier Wermeille
  • , Paul Thompson
  • , Alessandro Bombardi
  • , Virginie Simonet
  • , Stéphane Grenier
  • , Pascal Lejay
  • , Gilbert Andre Chahine
  • , Diana Lucia Quintero-Castro
  • , Rudolf Gross
  • , Danny Mannix
  • Bavarian Academy of Sciences and Humanities (Bayerische Akademie der Wissenschaften)
  • Lund University
  • Uppsala University
  • Technical University of Munich
  • European Synchrotron Radiation Facility
  • Diamond Light Source
  • University of Grenoble Alpes
  • SIMaP
  • University of Stavanger
  • Munich Center for Quantum Science and Technology (MCQST)
  • European Spallation Source (ESS)
  • Aarhus University

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report on a comprehensive investigation of the effects of strain and film thickness on the structural and magnetic properties of epitaxial thin films of the prototypal Jeff=1/2 compound Sr2IrO4 by advanced x-ray scattering. We find that the Sr2IrO4 thin films can be grown fully strained up to a thickness of 108 nm. By using x-ray resonant scattering, we show that the out-of-plane magnetic correlation length is strongly dependent on the thin film thickness, but independent of the strain state of the thin films. This can be used as a finely tuned dial to adjust the out-of-plane magnetic correlation length and transform the magnetic anisotropy from two-dimensional to three-dimensional behavior by incrementing film thickness. These results provide a clearer picture for the systematic control of the magnetic degrees of freedom in epitaxial thin films of Sr2IrO4 and bring to light the potential for a rich playground to explore the physics of 5d transition-metal compounds.

Original languageEnglish
Article number214402
JournalPhysical Review B
Volume102
Issue number21
DOIs
StatePublished - 2 Dec 2020

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