Porous silicon formation and electropolishing

Markus Rauscher; Herbert Spohn

Porous silicon formation and electropolishing

Markus Rauscher
, Herbert Spohn

TUM Emeriti of Excellence

Cornell University Laboratory of Atomic and Solid State Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The formation and electropolishing of porous silicon was investigated using electrochemical etching and electrochemical dissolution reactions. The etching rate at the interface between the semiconductor and the electrolyte was determined by the local current density. The results show that, on increasing the current density the stability flips either through a change of the valence of the dissolution reaction or by a nonlinear boundary condition at the interface.

Original language	English
Article number	031604
Pages (from-to)	316041-3160410
Number of pages	2844370
Journal	Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
Volume	64
Issue number	3 I
State	Published - Sep 2001

Cite this

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title = "Porous silicon formation and electropolishing",

abstract = "The formation and electropolishing of porous silicon was investigated using electrochemical etching and electrochemical dissolution reactions. The etching rate at the interface between the semiconductor and the electrolyte was determined by the local current density. The results show that, on increasing the current density the stability flips either through a change of the valence of the dissolution reaction or by a nonlinear boundary condition at the interface.",

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AB - The formation and electropolishing of porous silicon was investigated using electrochemical etching and electrochemical dissolution reactions. The etching rate at the interface between the semiconductor and the electrolyte was determined by the local current density. The results show that, on increasing the current density the stability flips either through a change of the valence of the dissolution reaction or by a nonlinear boundary condition at the interface.

UR - https://www.scopus.com/pages/publications/0035442672

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SN - 1539-3755

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JO - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

JF - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

IS - 3 I

M1 - 031604

ER -

Porous silicon formation and electropolishing

Abstract

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