Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

Bohuslav Rezek; Christoph E. Nebel; Martin Stutzmann

doi:10.1143/jjap.38.l1083

Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

Bohuslav Rezek, Christoph E. Nebel, Martin Stutzmann

TUM Emeriti of Excellence

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35 Scopus citations

Abstract

Pulsed interference laser crystallization of amorphous silicon has been applied to produce polycrystalline silicon thin films with grain sizes exceeding 5 μm. It has been achieved by shifting the samples through the interference pattern, with steps of typical 100 nm width. Grain sizes have been investigated by atomic force microscopy (AFM). The grains show quadratic shapes with a typical length of the applied interference period (5 μm) and width around 1.5-2.5 μm.

Original language	English
Pages (from-to)	L1083-L1084
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	10 A
DOIs	https://doi.org/10.1143/jjap.38.l1083
State	Published - 1 Oct 1999

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abstract = "Pulsed interference laser crystallization of amorphous silicon has been applied to produce polycrystalline silicon thin films with grain sizes exceeding 5 μm. It has been achieved by shifting the samples through the interference pattern, with steps of typical 100 nm width. Grain sizes have been investigated by atomic force microscopy (AFM). The grains show quadratic shapes with a typical length of the applied interference period (5 μm) and width around 1.5-2.5 μm.",

author = "Bohuslav Rezek and Nebel, {Christoph E.} and Martin Stutzmann",

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Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon. / Rezek, Bohuslav; Nebel, Christoph E.; Stutzmann, Martin.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 10 A, 01.10.1999, p. L1083-L1084.

Research output: Contribution to journal › Article › peer-review

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T1 - Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

AU - Rezek, Bohuslav

AU - Nebel, Christoph E.

AU - Stutzmann, Martin

PY - 1999/10/1

Y1 - 1999/10/1

N2 - Pulsed interference laser crystallization of amorphous silicon has been applied to produce polycrystalline silicon thin films with grain sizes exceeding 5 μm. It has been achieved by shifting the samples through the interference pattern, with steps of typical 100 nm width. Grain sizes have been investigated by atomic force microscopy (AFM). The grains show quadratic shapes with a typical length of the applied interference period (5 μm) and width around 1.5-2.5 μm.

AB - Pulsed interference laser crystallization of amorphous silicon has been applied to produce polycrystalline silicon thin films with grain sizes exceeding 5 μm. It has been achieved by shifting the samples through the interference pattern, with steps of typical 100 nm width. Grain sizes have been investigated by atomic force microscopy (AFM). The grains show quadratic shapes with a typical length of the applied interference period (5 μm) and width around 1.5-2.5 μm.

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M3 - Article

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SN - 0021-4922

VL - 38

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10 A

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Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

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