Polarization induced 2D hole gas in GaN/AlGaN heterostructures

S. Hackenbuchner, J. A. Majewski, G. Zandler, O. Ambacher, P. Vogl

Research output: Contribution to journalConference articlepeer-review

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Abstract

The generation of high density 2D hole gases is crucial for further progress in the field of electronic and optoelectronic nitride devices. In this paper, we present results of C-V profiling measurements for N-face GaN/AlGaN heterostructures and systematic theoretical studies of Mg-doped GaN/AlGaN gated heterostructures and superlattices. Our calculations are based on a self-consistent solution of the multiband k.p Schrödinger and Poisson equation and reveal that the hole 2D sheet density is mainly determined by the polarization induced interface charges. For an Aluminium concentration of 30%, the induced hole density in the heterostructure can reach values up to 1.5×1013 cm-2. In the GaN/AlGaN superlattices, the hole sheet density increases with the superlattice period and saturates for a period of 40 nm at a value of 1.5×1013 cm-2.

Original languageEnglish
Pages (from-to)G11.35.1-G11.35.6
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - 2001
Externally publishedYes
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: 27 Nov 20001 Dec 2000

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