Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

P. Kruck; A. Weichselbaum; M. Helm; T. Fromherz; G. Bauer; J. F. Nützel; G. Abstreiter

doi:10.1006/spmi.1996.0308

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

P. Kruck, A. Weichselbaum, M. Helm, T. Fromherz, G. Bauer, J. F. Nützel, G. Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si_0.64Ge_0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 μm with a peak-wavelength of λ_p = 5 μm under normal incidence illumination. At the optimum bias operating point a detectivity D_λ* = 2 × 10¹⁰ cm √Hz W^-1 is achieved. On the basis of a self-consistent six-band Luttinger-Kohn calculation the p- and s-polarized intersubband transitions, leading to the observed photoconductivity, are identified.

Original language	English
Pages (from-to)	61-66
Number of pages	6
Journal	Superlattices and Microstructures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1996.0308
State	Published - Jan 1998

Keywords

Infrared detector
Intersubband absorption
Si/SiGe

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10.1006/spmi.1996.0308

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title = "Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells",

abstract = "A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si0.64Ge0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 μm with a peak-wavelength of λp = 5 μm under normal incidence illumination. At the optimum bias operating point a detectivity Dλ* = 2 × 1010 cm √Hz W-1 is achieved. On the basis of a self-consistent six-band Luttinger-Kohn calculation the p- and s-polarized intersubband transitions, leading to the observed photoconductivity, are identified.",

keywords = "Infrared detector, Intersubband absorption, Si/SiGe",

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T1 - Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

AU - Kruck, P.

AU - Weichselbaum, A.

AU - Helm, M.

AU - Fromherz, T.

AU - Bauer, G.

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1998/1

Y1 - 1998/1

N2 - A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si0.64Ge0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 μm with a peak-wavelength of λp = 5 μm under normal incidence illumination. At the optimum bias operating point a detectivity Dλ* = 2 × 1010 cm √Hz W-1 is achieved. On the basis of a self-consistent six-band Luttinger-Kohn calculation the p- and s-polarized intersubband transitions, leading to the observed photoconductivity, are identified.

AB - A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si0.64Ge0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 μm with a peak-wavelength of λp = 5 μm under normal incidence illumination. At the optimum bias operating point a detectivity Dλ* = 2 × 1010 cm √Hz W-1 is achieved. On the basis of a self-consistent six-band Luttinger-Kohn calculation the p- and s-polarized intersubband transitions, leading to the observed photoconductivity, are identified.

KW - Infrared detector

KW - Intersubband absorption

KW - Si/SiGe

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DO - 10.1006/spmi.1996.0308

M3 - Article

AN - SCOPUS:0031672531

SN - 0749-6036

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EP - 66

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

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Keywords

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