Abstract
The polarisation dependence of the optical gain in quasi-index-guided, γ = 1.3 μm, GaInAsP/InP, metal-clad, ridge-waveguide laser diodes is demonstrated. It is shown experimentally that, depending on the lateral waveguiding, either the TE or the TM-polarised mode is favoured. By appropriate design of the laser structure, almost polarisation-independent internal optical gain has been experimentally achieved.
Original language | English |
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Pages (from-to) | 1017-1018 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 25 |
Issue number | 16 |
DOIs | |
State | Published - 20 Jul 1989 |
Externally published | Yes |
Keywords
- LEDs
- Optical communications
- Optical waveguides
- Semiconductor lasers