Physics and perspectives of si/ge heterostructures and superlattices

Gerhard Abstreiter

doi:10.1088/0031-8949/1993/T49A/006

Physics and perspectives of si/ge heterostructures and superlattices

Gerhard Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Recent developments in Si/Ge heteroepitaxy led to spectacular improvements of electrical and optical properties of Si based heterostructures and superlattices. We discuss the realization of high mobility electron and hole channels in Si or Ge quantum wells, the band gap related luminescence in SiGe quantum wells and strain symmetrized Si/Ge short period superlattices and far-infrared intersubband transitions in narrow quantum wells. Possible device applications are pointed out.

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	Physica Scripta
Volume	1993
Issue number	T49A
DOIs	https://doi.org/10.1088/0031-8949/1993/T49A/006
State	Published - 1 Jan 1993

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@article{1e8688fa0f0248d2b85097e061c95ada,

title = "Physics and perspectives of si/ge heterostructures and superlattices",

abstract = "Recent developments in Si/Ge heteroepitaxy led to spectacular improvements of electrical and optical properties of Si based heterostructures and superlattices. We discuss the realization of high mobility electron and hole channels in Si or Ge quantum wells, the band gap related luminescence in SiGe quantum wells and strain symmetrized Si/Ge short period superlattices and far-infrared intersubband transitions in narrow quantum wells. Possible device applications are pointed out.",

author = "Gerhard Abstreiter",

year = "1993",

month = jan,

day = "1",

doi = "10.1088/0031-8949/1993/T49A/006",

language = "English",

volume = "1993",

pages = "42--45",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "Institute of Physics",

number = "T49A",

}

TY - JOUR

T1 - Physics and perspectives of si/ge heterostructures and superlattices

AU - Abstreiter, Gerhard

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Recent developments in Si/Ge heteroepitaxy led to spectacular improvements of electrical and optical properties of Si based heterostructures and superlattices. We discuss the realization of high mobility electron and hole channels in Si or Ge quantum wells, the band gap related luminescence in SiGe quantum wells and strain symmetrized Si/Ge short period superlattices and far-infrared intersubband transitions in narrow quantum wells. Possible device applications are pointed out.

AB - Recent developments in Si/Ge heteroepitaxy led to spectacular improvements of electrical and optical properties of Si based heterostructures and superlattices. We discuss the realization of high mobility electron and hole channels in Si or Ge quantum wells, the band gap related luminescence in SiGe quantum wells and strain symmetrized Si/Ge short period superlattices and far-infrared intersubband transitions in narrow quantum wells. Possible device applications are pointed out.

UR - http://www.scopus.com/inward/record.url?scp=84956111134&partnerID=8YFLogxK

U2 - 10.1088/0031-8949/1993/T49A/006

DO - 10.1088/0031-8949/1993/T49A/006

M3 - Article

AN - SCOPUS:84956111134

SN - 0031-8949

VL - 1993

SP - 42

EP - 45

JO - Physica Scripta

JF - Physica Scripta

IS - T49A

ER -

Physics and perspectives of si/ge heterostructures and superlattices

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