@inproceedings{b55b2195db824f0bada106ae2c66ff25,
title = "Physics and growth of Si-doped two-dimensional high mobility hole gases on (110) oriented GaAs",
abstract = "We report the physics of the first high mobility two-dimensional hole gas (2DHG) in a modulation-doped heterostructure on the (110) GaAs surface using Si as a dopant. The 2DHG has a high hole mobility of μ = 175 000 cm 2/V-1 s-1 at a density of n = 2.3 × 1011 cm-2. The density of the 2DHG is either tuned by an evaporated Al front gate or a persistent photoconductivity effect with a factor of ×2 increase in density. We study the anisotropy of the mobility in the two principal in-plane directions [1{\=1}0] and [001] and perform 6-band k p simulations of the bandstructure for 2DHGs without taking bulk inversion asymmetry into account.",
author = "F. Fischer and M. Grayson and D. Schuh and M. Bichler and G. Abstreiter",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994174",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "443--444",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}