Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

W. Kaindl; G. Sölkner; H. W. Becker; J. Meijer; H. J. Schulze; G. Wachutka

doi:10.1109/wct.2004.239974

Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

W. Kaindl
, G. Sölkner
, H. W. Becker
, J. Meijer
, H. J. Schulze
, G. Wachutka

Computation, Information and Technology

Technical University of Munich
Infineon Technologies AG
Max-Planck-lnstitut für Kohlenforschung

Research output: Contribution to conference › Paper › peer-review

16 Scopus citations

Abstract

Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to ⁸⁴Kr, ²⁸Si, and ¹²C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier denisities occuring in the interior of the device. therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.

Original language	English
Pages	257-260
Number of pages	4
DOIs	https://doi.org/10.1109/wct.2004.239974
State	Published - 2004
Event	Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan Duration: 24 May 2004 → 27 May 2004

Conference

Conference	Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
Country/Territory	Japan
City	Kitakyushu
Period	24/05/04 → 27/05/04

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10.1109/wct.2004.239974

Cite this

Kaindl, W., Sölkner, G., Becker, H. W., Meijer, J., Schulze, H. J., & Wachutka, G. (2004). Physically based simulation of strong charge multiplication events in power devices triggered by incident ions. 257-260. Paper presented at Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan. https://doi.org/10.1109/wct.2004.239974

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title = "Physically based simulation of strong charge multiplication events in power devices triggered by incident ions",

abstract = "Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to 84Kr, 28Si, and 12C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier denisities occuring in the interior of the device. therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.",

author = "W. Kaindl and G. S{\"o}lkner and Becker, \{H. W.\} and J. Meijer and Schulze, \{H. J.\} and G. Wachutka",

year = "2004",

doi = "10.1109/wct.2004.239974",

language = "English",

pages = "257--260",

note = "Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) ; Conference date: 24-05-2004 Through 27-05-2004",

}

Kaindl, W, Sölkner, G, Becker, HW, Meijer, J, Schulze, HJ & Wachutka, G 2004, 'Physically based simulation of strong charge multiplication events in power devices triggered by incident ions', Paper presented at Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan, 24/05/04 - 27/05/04 pp. 257-260. https://doi.org/10.1109/wct.2004.239974

Physically based simulation of strong charge multiplication events in power devices triggered by incident ions. / Kaindl, W.; Sölkner, G.; Becker, H. W. et al.
2004. 257-260 Paper presented at Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

AU - Kaindl, W.

AU - Sölkner, G.

AU - Becker, H. W.

AU - Meijer, J.

AU - Schulze, H. J.

AU - Wachutka, G.

PY - 2004

Y1 - 2004

N2 - Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to 84Kr, 28Si, and 12C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier denisities occuring in the interior of the device. therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.

AB - Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to 84Kr, 28Si, and 12C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier denisities occuring in the interior of the device. therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.

UR - https://www.scopus.com/pages/publications/4544260253

U2 - 10.1109/wct.2004.239974

DO - 10.1109/wct.2004.239974

M3 - Paper

AN - SCOPUS:4544260253

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EP - 260

T2 - Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)

Y2 - 24 May 2004 through 27 May 2004

ER -

Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

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