Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior

Dorothea Werber; Gerhard Wachutka

doi:10.1109/ISDRS.2009.5378180

Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior

Dorothea Werber, Gerhard Wachutka

Computation, Information and Technology

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378180
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

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10.1109/ISDRS.2009.5378180

Cite this

@inproceedings{b3a7ab60d09c406e98fb710492dba22d,

title = "Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior",

author = "Dorothea Werber and Gerhard Wachutka",

year = "2009",

doi = "10.1109/ISDRS.2009.5378180",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Werber, D & Wachutka, G 2009, Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378180, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378180

Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior. / Werber, Dorothea; Wachutka, Gerhard.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378180 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior

AU - Werber, Dorothea

AU - Wachutka, Gerhard

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=77949412181&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378180

DO - 10.1109/ISDRS.2009.5378180

M3 - Conference contribution

AN - SCOPUS:77949412181

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior

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