Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2

Alexander Hötger; Wolfgang Männer; Tomer Amit; Daniel Hernangómez-Pérez; Takashi Taniguchi; Kenji Watanabe; Ursula Wurstbauer; Jonathan J. Finley; Sivan Refaely-Abramson; Christoph Kastl; Alexander W. Holleitner

doi:10.1021/acs.nanolett.3c03517

Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS₂

Alexander Hötger, Wolfgang Männer, Tomer Amit, Daniel Hernangómez-Pérez, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Jonathan J. Finley, Sivan Refaely-Abramson, Christoph Kastl, Alexander W. Holleitner

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS₂, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

Original language	English
Pages (from-to)	11655-11661
Number of pages	7
Journal	Nano Letters
Volume	23
Issue number	24
DOIs	https://doi.org/10.1021/acs.nanolett.3c03517
State	Published - 27 Dec 2023

Keywords

2D materials
2D photodetector
single defects
van der Waals heterostack
vertical tunneling diode

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10.1021/acs.nanolett.3c03517

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@article{7c312e02e5b84601a6f7a7ea3625300b,

title = "Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2",

abstract = "We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.",

keywords = "2D materials, 2D photodetector, single defects, van der Waals heterostack, vertical tunneling diode",

author = "Alexander H{\"o}tger and Wolfgang M{\"a}nner and Tomer Amit and Daniel Hernang{\'o}mez-P{\'e}rez and Takashi Taniguchi and Kenji Watanabe and Ursula Wurstbauer and Finley, {Jonathan J.} and Sivan Refaely-Abramson and Christoph Kastl and Holleitner, {Alexander W.}",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = dec,

day = "27",

doi = "10.1021/acs.nanolett.3c03517",

language = "English",

volume = "23",

pages = "11655--11661",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "24",

}

TY - JOUR

T1 - Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2

AU - Hötger, Alexander

AU - Männer, Wolfgang

AU - Amit, Tomer

AU - Hernangómez-Pérez, Daniel

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Wurstbauer, Ursula

AU - Finley, Jonathan J.

AU - Refaely-Abramson, Sivan

AU - Kastl, Christoph

AU - Holleitner, Alexander W.

PY - 2023/12/27

Y1 - 2023/12/27

N2 - We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

AB - We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

KW - 2D materials

KW - 2D photodetector

KW - single defects

KW - van der Waals heterostack

KW - vertical tunneling diode

UR - http://www.scopus.com/inward/record.url?scp=85180101639&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.3c03517

DO - 10.1021/acs.nanolett.3c03517

M3 - Article

AN - SCOPUS:85180101639

SN - 1530-6984

VL - 23

SP - 11655

EP - 11661

JO - Nano Letters

JF - Nano Letters

IS - 24

ER -

Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS₂

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Keywords

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