Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

Ruediger Goldhahn; C. Buchheim; S. Shokhovets; G. Gobsch; O. Ambacher; A. Link; M. Hermann; M. Stutzmann; Y. Smorchkova; U. K. Mishra; J. S. Speck

doi:10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

Ruediger Goldhahn
, C. Buchheim
, S. Shokhovets
, G. Gobsch
, O. Ambacher
, A. Link
, M. Hermann
, M. Stutzmann
, Y. Smorchkova
, U. K. Mishra
, J. S. Speck

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have carried out photoreflectance measurements in order to determine the electric field strength F_B within the unintentionally doped barriers of Ga-face polarity Al_xGa_1-xN/GaN heterostructures containing high-mobile polarisation induced 2DEGs. For the sample with both the lowest alloy composition (x = 0.06) and lowest sheet carrier density (n_s = 1 × 10¹² cm^-2) the analysis of the FKO yields F_B = 335 kV/cm at RT. F_B decreases by 130 kV/cm when cooling down the structure to T = 5 K. In comparison, samples with larger x and n_s values show lower field strength at RT but a similar temperature dependence. The results can be explained by a change of piezoelectric polarisation.

Original language	English
Pages (from-to)	713-716
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	234
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O
State	Published - Dec 2002

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Goldhahn, R., Buchheim, C., Shokhovets, S., Gobsch, G., Ambacher, O., Link, A., Hermann, M., Stutzmann, M., Smorchkova, Y., Mishra, U. K., & Speck, J. S. (2002). Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG. Physica Status Solidi (B) Basic Research, 234(3), 713-716. https://doi.org/10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

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title = "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG",

abstract = "We have carried out photoreflectance measurements in order to determine the electric field strength FB within the unintentionally doped barriers of Ga-face polarity AlxGa1-xN/GaN heterostructures containing high-mobile polarisation induced 2DEGs. For the sample with both the lowest alloy composition (x = 0.06) and lowest sheet carrier density (ns = 1 × 1012 cm-2) the analysis of the FKO yields FB = 335 kV/cm at RT. FB decreases by 130 kV/cm when cooling down the structure to T = 5 K. In comparison, samples with larger x and ns values show lower field strength at RT but a similar temperature dependence. The results can be explained by a change of piezoelectric polarisation.",

author = "Ruediger Goldhahn and C. Buchheim and S. Shokhovets and G. Gobsch and O. Ambacher and A. Link and M. Hermann and M. Stutzmann and Y. Smorchkova and Mishra, \{U. K.\} and Speck, \{J. S.\}",

year = "2002",

month = dec,

doi = "10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O",

language = "English",

volume = "234",

pages = "713--716",

journal = "Physica Status Solidi (B) Basic Research",

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Goldhahn, R, Buchheim, C, Shokhovets, S, Gobsch, G, Ambacher, O, Link, A, Hermann, M, Stutzmann, M, Smorchkova, Y, Mishra, UK & Speck, JS 2002, 'Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG', Physica Status Solidi (B) Basic Research, vol. 234, no. 3, pp. 713-716. https://doi.org/10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

TY - JOUR

T1 - Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

AU - Goldhahn, Ruediger

AU - Buchheim, C.

AU - Shokhovets, S.

AU - Gobsch, G.

AU - Ambacher, O.

AU - Link, A.

AU - Hermann, M.

AU - Stutzmann, M.

AU - Smorchkova, Y.

AU - Mishra, U. K.

AU - Speck, J. S.

PY - 2002/12

Y1 - 2002/12

N2 - We have carried out photoreflectance measurements in order to determine the electric field strength FB within the unintentionally doped barriers of Ga-face polarity AlxGa1-xN/GaN heterostructures containing high-mobile polarisation induced 2DEGs. For the sample with both the lowest alloy composition (x = 0.06) and lowest sheet carrier density (ns = 1 × 1012 cm-2) the analysis of the FKO yields FB = 335 kV/cm at RT. FB decreases by 130 kV/cm when cooling down the structure to T = 5 K. In comparison, samples with larger x and ns values show lower field strength at RT but a similar temperature dependence. The results can be explained by a change of piezoelectric polarisation.

AB - We have carried out photoreflectance measurements in order to determine the electric field strength FB within the unintentionally doped barriers of Ga-face polarity AlxGa1-xN/GaN heterostructures containing high-mobile polarisation induced 2DEGs. For the sample with both the lowest alloy composition (x = 0.06) and lowest sheet carrier density (ns = 1 × 1012 cm-2) the analysis of the FKO yields FB = 335 kV/cm at RT. FB decreases by 130 kV/cm when cooling down the structure to T = 5 K. In comparison, samples with larger x and ns values show lower field strength at RT but a similar temperature dependence. The results can be explained by a change of piezoelectric polarisation.

UR - https://www.scopus.com/pages/publications/0036929942

U2 - 10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

DO - 10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

M3 - Article

AN - SCOPUS:0036929942

SN - 0370-1972

VL - 234

SP - 713

EP - 716

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 3

ER -

Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

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