Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

Ruediger Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck

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We have carried out photoreflectance measurements in order to determine the electric field strength FB within the unintentionally doped barriers of Ga-face polarity AlxGa1-xN/GaN heterostructures containing high-mobile polarisation induced 2DEGs. For the sample with both the lowest alloy composition (x = 0.06) and lowest sheet carrier density (ns = 1 × 1012 cm-2) the analysis of the FKO yields FB = 335 kV/cm at RT. FB decreases by 130 kV/cm when cooling down the structure to T = 5 K. In comparison, samples with larger x and ns values show lower field strength at RT but a similar temperature dependence. The results can be explained by a change of piezoelectric polarisation.

Original languageEnglish
Pages (from-to)713-716
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number3
StatePublished - Dec 2002


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