Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

P. Schittenhelm; M. Gail; J. Brunner; J. F. Nützel; G. Abstreiter

doi:10.1063/1.114401

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

P. Schittenhelm
, M. Gail
, J. Brunner
, J. F. Nützel
, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

171 Scopus citations

Abstract

Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two-dimensional (2D) strained-layer growth to three dimensional Stranski-Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands formed by three-dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands.

Original language	English
Pages (from-to)	1292
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114401
State	Published - 1995

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title = "Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)",

abstract = "Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two-dimensional (2D) strained-layer growth to three dimensional Stranski-Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands formed by three-dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands.",

author = "P. Schittenhelm and M. Gail and J. Brunner and N{\"u}tzel, \{J. F.\} and G. Abstreiter",

year = "1995",

doi = "10.1063/1.114401",

language = "English",

volume = "67",

pages = "1292",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

AU - Schittenhelm, P.

AU - Gail, M.

AU - Brunner, J.

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1995

Y1 - 1995

N2 - Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two-dimensional (2D) strained-layer growth to three dimensional Stranski-Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands formed by three-dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands.

AB - Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two-dimensional (2D) strained-layer growth to three dimensional Stranski-Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands formed by three-dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands.

UR - https://www.scopus.com/pages/publications/0029358642

U2 - 10.1063/1.114401

DO - 10.1063/1.114401

M3 - Article

AN - SCOPUS:0029358642

SN - 0003-6951

VL - 67

SP - 1292

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

Abstract

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