Keyphrases
Absorption Coefficient
12%
Annealing
25%
Annealing Treatment
12%
Atomic Environment
12%
Auger Effect
12%
Band Excitation
12%
Band Tail States
12%
Band-to-band
12%
Broad Spectral Range
12%
C-Si
12%
Defect Annealing
12%
Defect Density
25%
Drastic Change
12%
Electron Spin Resonance
12%
Electronegative Atoms
12%
Er Ions
12%
Er3+
100%
Er3+ Ions
12%
Erbium
12%
Erbium Ions
12%
Erbium Luminescence
12%
Excitation Experiment
12%
Excitation Model
12%
High Energy Photons
12%
High Oxygen Content
12%
Host Matrix
12%
Hydrogenated Amorphous Silicon
100%
Implantation Dose
25%
Implantation Induced Defects
12%
Intrinsic Photoluminescence
37%
Large Band Gap
12%
Limited Solubility
12%
Localization Bands
12%
Luminescence
25%
Optical Band Gap
12%
Optical Properties
12%
Order of Magnitude
25%
Oxygen Content
50%
Photoluminescence
100%
Photoluminescence Excitation
12%
Photoluminescence Intensity
12%
Photoluminescence Measurements
25%
Photoluminescence Spectra
12%
Resonance Absorption
12%
Room Temperature
12%
Silicon Suboxide
100%
SiOx
100%
Structural Arrangement
12%
Sub-bandgap
12%
Sub-bandgap Absorption
12%
Temperature Treatment
12%
Temperature-dependent Photoluminescence
12%
Thermal Quenching
12%
Transfer Mechanism
12%
Material Science
Amorphous Silicon
100%
Annealing
13%
Defect Density
13%
Electron Paramagnetic Resonance Spectroscopy
6%
Erbium
20%
Luminescence
20%
Optical Property
6%
Photoluminescence
100%