Photoluminescence in short period Si/Ge strained layer superlattices grown on Si and Ge substrates

R. Zachai; K. Eberl; G. Abstreiter; E. Kasper; H. Kibbel

doi:10.1016/0039-6028(90)90306-S

Photoluminescence in short period Si/Ge strained layer superlattices grown on Si and Ge substrates

R. Zachai
, K. Eberl
, G. Abstreiter
, E. Kasper
, H. Kibbel

TUM Emeriti of Excellence

Walter Schottky Institut
AEG

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Strong optical transitions in the energy range 0.7 to 0.9 eV are observed with photoluminescence (PL) in short period Si/Ge strained layer superlattices. These transitions are strongly influenced by period, strain distribution and layer thickness ratio. Both temperature- and polarization-dependent properties of the PL transitions are studied.

Original language	English
Pages (from-to)	267-269
Number of pages	3
Journal	Surface Science
Volume	228
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90306-S
State	Published - 1 Apr 1990

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@article{43213d3484eb40f1972eeaf9b29c4acd,

title = "Photoluminescence in short period Si/Ge strained layer superlattices grown on Si and Ge substrates",

abstract = "Strong optical transitions in the energy range 0.7 to 0.9 eV are observed with photoluminescence (PL) in short period Si/Ge strained layer superlattices. These transitions are strongly influenced by period, strain distribution and layer thickness ratio. Both temperature- and polarization-dependent properties of the PL transitions are studied.",

author = "R. Zachai and K. Eberl and G. Abstreiter and E. Kasper and H. Kibbel",

year = "1990",

month = apr,

day = "1",

doi = "10.1016/0039-6028(90)90306-S",

language = "English",

volume = "228",

pages = "267--269",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Photoluminescence in short period Si/Ge strained layer superlattices grown on Si and Ge substrates

AU - Zachai, R.

AU - Eberl, K.

AU - Abstreiter, G.

AU - Kasper, E.

AU - Kibbel, H.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - Strong optical transitions in the energy range 0.7 to 0.9 eV are observed with photoluminescence (PL) in short period Si/Ge strained layer superlattices. These transitions are strongly influenced by period, strain distribution and layer thickness ratio. Both temperature- and polarization-dependent properties of the PL transitions are studied.

AB - Strong optical transitions in the energy range 0.7 to 0.9 eV are observed with photoluminescence (PL) in short period Si/Ge strained layer superlattices. These transitions are strongly influenced by period, strain distribution and layer thickness ratio. Both temperature- and polarization-dependent properties of the PL transitions are studied.

UR - https://www.scopus.com/pages/publications/4244097355

U2 - 10.1016/0039-6028(90)90306-S

DO - 10.1016/0039-6028(90)90306-S

M3 - Article

AN - SCOPUS:4244097355

SN - 0039-6028

VL - 228

SP - 267

EP - 269

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Photoluminescence in short period Si/Ge strained layer superlattices grown on Si and Ge substrates

Abstract

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