Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE

M. Markmann; E. Neufeld; K. Brunner; G. Abstreiter; Ch Buchal

doi:10.1016/S0040-6090(00)00899-3

Photoluminescence characterization of erbium doped Si_1-yC_y alloys grown by MBE

M. Markmann
, E. Neufeld
, K. Brunner
, G. Abstreiter
, Ch Buchal

Natural Sciences

Walter Schottky Institut
Forschungszentrum Jülich (FZJ)

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have studied the influence of carbon codoping in Si_1-yC_y:Er layers on the photoluminescence efficiency of the 1.54 μm wavelength Er emission. All samples were prepared by molecular beam epitaxy (MBE) with carbon concentrations between y = 0.08 and 0.4%. Maximum photoluminescence output at low temperature T = 5 K could be realized for growth temperatures around 430 °C and an erbium to carbon content ratio of about one ([Er] = 4.5×10¹⁹ cm^-3, y = 0.1%). The efficiency could be further enhanced by annealing and is comparable to our best Si:Er:O samples. A decrease in photoluminescence intensity at 1.54 μm was observed for increasing sample temperature. It decreases stronger for carbon codoped Si_1-yC_y:Er layers than for Si:Er:O samples. High resolution photoluminescence spectra show both a difference in the spectral position of the main erbium line as well as in the fine structure for oxygen and carbon codoping.

Original language	English
Pages (from-to)	398-401
Number of pages	4
Journal	Thin Solid Films
Volume	369
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00899-3
State	Published - 3 Jul 2000
Event	The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 12 Sep 1999 → 17 Sep 1999

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@article{dcbf037c882b4d72a1c55dd2eaa428e8,

title = "Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE",

abstract = "We have studied the influence of carbon codoping in Si1-yCy:Er layers on the photoluminescence efficiency of the 1.54 μm wavelength Er emission. All samples were prepared by molecular beam epitaxy (MBE) with carbon concentrations between y = 0.08 and 0.4\%. Maximum photoluminescence output at low temperature T = 5 K could be realized for growth temperatures around 430 °C and an erbium to carbon content ratio of about one ([Er] = 4.5×1019 cm-3, y = 0.1\%). The efficiency could be further enhanced by annealing and is comparable to our best Si:Er:O samples. A decrease in photoluminescence intensity at 1.54 μm was observed for increasing sample temperature. It decreases stronger for carbon codoped Si1-yCy:Er layers than for Si:Er:O samples. High resolution photoluminescence spectra show both a difference in the spectral position of the main erbium line as well as in the fine structure for oxygen and carbon codoping.",

author = "M. Markmann and E. Neufeld and K. Brunner and G. Abstreiter and Ch Buchal",

year = "2000",

month = jul,

day = "3",

doi = "10.1016/S0040-6090(00)00899-3",

language = "English",

volume = "369",

pages = "398--401",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

note = "The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) ; Conference date: 12-09-1999 Through 17-09-1999",

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TY - JOUR

T1 - Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE

AU - Markmann, M.

AU - Neufeld, E.

AU - Brunner, K.

AU - Abstreiter, G.

AU - Buchal, Ch

PY - 2000/7/3

Y1 - 2000/7/3

N2 - We have studied the influence of carbon codoping in Si1-yCy:Er layers on the photoluminescence efficiency of the 1.54 μm wavelength Er emission. All samples were prepared by molecular beam epitaxy (MBE) with carbon concentrations between y = 0.08 and 0.4%. Maximum photoluminescence output at low temperature T = 5 K could be realized for growth temperatures around 430 °C and an erbium to carbon content ratio of about one ([Er] = 4.5×1019 cm-3, y = 0.1%). The efficiency could be further enhanced by annealing and is comparable to our best Si:Er:O samples. A decrease in photoluminescence intensity at 1.54 μm was observed for increasing sample temperature. It decreases stronger for carbon codoped Si1-yCy:Er layers than for Si:Er:O samples. High resolution photoluminescence spectra show both a difference in the spectral position of the main erbium line as well as in the fine structure for oxygen and carbon codoping.

AB - We have studied the influence of carbon codoping in Si1-yCy:Er layers on the photoluminescence efficiency of the 1.54 μm wavelength Er emission. All samples were prepared by molecular beam epitaxy (MBE) with carbon concentrations between y = 0.08 and 0.4%. Maximum photoluminescence output at low temperature T = 5 K could be realized for growth temperatures around 430 °C and an erbium to carbon content ratio of about one ([Er] = 4.5×1019 cm-3, y = 0.1%). The efficiency could be further enhanced by annealing and is comparable to our best Si:Er:O samples. A decrease in photoluminescence intensity at 1.54 μm was observed for increasing sample temperature. It decreases stronger for carbon codoped Si1-yCy:Er layers than for Si:Er:O samples. High resolution photoluminescence spectra show both a difference in the spectral position of the main erbium line as well as in the fine structure for oxygen and carbon codoping.

UR - https://www.scopus.com/pages/publications/0034226885

U2 - 10.1016/S0040-6090(00)00899-3

DO - 10.1016/S0040-6090(00)00899-3

M3 - Conference article

AN - SCOPUS:0034226885

SN - 0040-6090

VL - 369

SP - 398

EP - 401

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)

Y2 - 12 September 1999 through 17 September 1999

ER -

Photoluminescence characterization of erbium doped Si_1-yC_y alloys grown by MBE

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