Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE

M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, Ch Buchal

Research output: Contribution to journalConference articlepeer-review

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We have studied the influence of carbon codoping in Si1-yCy:Er layers on the photoluminescence efficiency of the 1.54 μm wavelength Er emission. All samples were prepared by molecular beam epitaxy (MBE) with carbon concentrations between y = 0.08 and 0.4%. Maximum photoluminescence output at low temperature T = 5 K could be realized for growth temperatures around 430 °C and an erbium to carbon content ratio of about one ([Er] = 4.5×1019 cm-3, y = 0.1%). The efficiency could be further enhanced by annealing and is comparable to our best Si:Er:O samples. A decrease in photoluminescence intensity at 1.54 μm was observed for increasing sample temperature. It decreases stronger for carbon codoped Si1-yCy:Er layers than for Si:Er:O samples. High resolution photoluminescence spectra show both a difference in the spectral position of the main erbium line as well as in the fine structure for oxygen and carbon codoping.

Original languageEnglish
Pages (from-to)398-401
Number of pages4
JournalThin Solid Films
Issue number1
StatePublished - 3 Jul 2000
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 12 Sep 199917 Sep 1999


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