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Photoelectrochemical Response of Tin Iodide Phosphide (SnIP) Composites with MoSe2, MoS2, and h-BN

  • Annabelle Degg
  • , Kathrin Vosseler
  • , Navneet Kumar
  • , Narendra Chaulagain
  • , Markus R.P. Pielmeier
  • , Tom Nilges
  • , Karthik Shankar
  • Technical University of Munich
  • University of Alberta

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

For a future world fuelled by green energy it is invaluable to develop, test and maximise the catalytic efficiency of new effective water-splitting materials. In this paper, we further explore the catalytic activity of double-helical tin iodide phosphide (SnIP), as it features bandgaps in the ideal region for this process. We found that its photoelectrochemical response can be multiplied by forming composites of SnIP with selected 2D materials, focusing on hexagonal boron nitride and the transition metal dichalcogenides (TMDs) MoSe2 and MoS2. These nanocomposites were analysed with Powder-X-ray diffraction (P-XRD), Raman, and UV/VIS bandgap determination. Their photo activity was assessed under simulated solar light through chrono amperometry and linear sweep voltammetry (CA, LSV). The high anisotropy of the involved materials enables efficient charge separation at the 1D/2D interfaces, increasing photoelectrochemical response four-fold.

Original languageEnglish
Article numbere202400129
JournalZeitschrift fur Anorganische und Allgemeine Chemie
Volume651
Issue number1
DOIs
StatePublished - 29 Jan 2025

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Anisotropy
  • Boron nitride
  • Heterojunction
  • Phosphorus
  • Photocatalyst
  • Photoelectrochemical response
  • Semiconductors
  • SnIP
  • TMD

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