Abstract
Photoelectrochemical techniques have been used to study ion implanted oxide films on titanium and hafnium. The disorder induced by the implantation process is well reflected in photocurrent spectra as well as the potential dependence of the photocurrent. This is due to a large number of localized states created by the interaction of impinging ions of high kinetic energy with the host lattice. In hafnium oxide the disorder is reflected in the localized states created within the bandgap, whereas in titanium oxide it is reflected rather in the localization of the conduction band. The results indicate the ability of photoelectrochemistry to investigate structural properties under in situ conditions.
Original language | English |
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Pages (from-to) | 505-510 |
Number of pages | 6 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 23 |
Issue number | 4 |
DOIs | |
State | Published - 2 May 1987 |
Externally published | Yes |