Photoconductivity study of Li doped homoepitaxially grown CVD diamond

R. Zeisel; C. E. Nebel; M. Stutzmann; H. Sternschulte; M. Schreck; B. Stritzker

doi:10.1002/1521-396X(200009)181:1<45::AID-PSSA45>3.0.CO;2-2

Photoconductivity study of Li doped homoepitaxially grown CVD diamond

R. Zeisel, C. E. Nebel, M. Stutzmann, H. Sternschulte, M. Schreck, B. Stritzker

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Spectrally resolved photoconductivity (PC) experiments on homoepitaxially grown, Li doped chemical vapour deposited diamond layers are presented. Our measurements reveal two new photoconductive levels with absorption thresholds at photon energies of 0.9 eV and 1.5 eV. Due to metastable occupation, the spectral dependence of the photoconductivity exhibits a pronounced peak. Via photoconductivity excitation experiments it could be shown that both new levels can be filled by photoionisation of the N donor. No correlation between Li content and spectral weight of photoexcitation at 1.7 eV could be observed.

Original language	English
Pages (from-to)	45-50
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	181
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200009)181:1<45::AID-PSSA45>3.0.CO;2-2
State	Published - Sep 2000

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title = "Photoconductivity study of Li doped homoepitaxially grown CVD diamond",

abstract = "Spectrally resolved photoconductivity (PC) experiments on homoepitaxially grown, Li doped chemical vapour deposited diamond layers are presented. Our measurements reveal two new photoconductive levels with absorption thresholds at photon energies of 0.9 eV and 1.5 eV. Due to metastable occupation, the spectral dependence of the photoconductivity exhibits a pronounced peak. Via photoconductivity excitation experiments it could be shown that both new levels can be filled by photoionisation of the N donor. No correlation between Li content and spectral weight of photoexcitation at 1.7 eV could be observed.",

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T1 - Photoconductivity study of Li doped homoepitaxially grown CVD diamond

AU - Zeisel, R.

AU - Nebel, C. E.

AU - Stutzmann, M.

AU - Sternschulte, H.

AU - Schreck, M.

AU - Stritzker, B.

PY - 2000/9

Y1 - 2000/9

N2 - Spectrally resolved photoconductivity (PC) experiments on homoepitaxially grown, Li doped chemical vapour deposited diamond layers are presented. Our measurements reveal two new photoconductive levels with absorption thresholds at photon energies of 0.9 eV and 1.5 eV. Due to metastable occupation, the spectral dependence of the photoconductivity exhibits a pronounced peak. Via photoconductivity excitation experiments it could be shown that both new levels can be filled by photoionisation of the N donor. No correlation between Li content and spectral weight of photoexcitation at 1.7 eV could be observed.

AB - Spectrally resolved photoconductivity (PC) experiments on homoepitaxially grown, Li doped chemical vapour deposited diamond layers are presented. Our measurements reveal two new photoconductive levels with absorption thresholds at photon energies of 0.9 eV and 1.5 eV. Due to metastable occupation, the spectral dependence of the photoconductivity exhibits a pronounced peak. Via photoconductivity excitation experiments it could be shown that both new levels can be filled by photoionisation of the N donor. No correlation between Li content and spectral weight of photoexcitation at 1.7 eV could be observed.

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Photoconductivity study of Li doped homoepitaxially grown CVD diamond

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