Photoconductive gain in semiconductor quantum wires

K. D. Hof, C. Rossler, S. Manus, J. P. Kotthaus, D. Schuh, W. Wegscheider, A. W. Holleitner

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages331-332
Number of pages2
DOIs
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period27/07/081/08/08

Keywords

  • Optoelectronic transport
  • Quantum wire

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