Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

M. Stallhofer; M. Seifert; M. V. Hauf; G. Abstreiter; M. Stutzmann; J. A. Garrido; A. W. Holleitner

doi:10.1063/1.3487785

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

M. Stallhofer, M. Seifert, M. V. Hauf, G. Abstreiter, M. Stutzmann, J. A. Garrido, A. W. Holleitner

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

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Abstract

We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects.

Original language	English
Article number	111107
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3487785
State	Published - 13 Sep 2010

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abstract = "We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects.",

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AU - Stallhofer, M.

AU - Seifert, M.

AU - Hauf, M. V.

AU - Abstreiter, G.

AU - Stutzmann, M.

AU - Garrido, J. A.

AU - Holleitner, A. W.

PY - 2010/9/13

Y1 - 2010/9/13

N2 - We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects.

AB - We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects.

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

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