Abstract
The epitaxial growth of Si//xGe//1// minus //x thin films on (110) GaAs cleavage surfaces is studied by Raman spectroscopy. The peak positions of the optical phonon modes are a direct measure of the alloy composition and the built-in strain. For thin layers the lattice mismatch is found to be accommodated elastically, the layers are commensurate with the substrate.
| Original language | English |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Editors | K. Ploog, N.T. Linh |
| Publisher | Editions de Physique |
| Pages | 209-212 |
| Number of pages | 4 |
| ISBN (Print) | 2868830153 |
| State | Published - 1986 |