PHONON PROPERTIES OF Si//xGe//1// minus //x STRAINED OVERLAYERS ON (110) GaAs.

H. Brugger; G. Abstreiter

PHONON PROPERTIES OF Si//xGe//1// minus //x STRAINED OVERLAYERS ON (110) GaAs.

H. Brugger, G. Abstreiter

TUM Emeriti of Excellence

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The epitaxial growth of Si//xGe//1// minus //x thin films on (110) GaAs cleavage surfaces is studied by Raman spectroscopy. The peak positions of the optical phonon modes are a direct measure of the alloy composition and the built-in strain. For thin layers the lattice mismatch is found to be accommodated elastically, the layers are commensurate with the substrate.

Original language	English
Title of host publication	Unknown Host Publication Title
Editors	K. Ploog, N.T. Linh
Publisher	Editions de Physique
Pages	209-212
Number of pages	4
ISBN (Print)	2868830153
State	Published - 1986

Cite this

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title = "PHONON PROPERTIES OF Si//xGe//1// minus //x STRAINED OVERLAYERS ON (110) GaAs.",

abstract = "The epitaxial growth of Si//xGe//1// minus //x thin films on (110) GaAs cleavage surfaces is studied by Raman spectroscopy. The peak positions of the optical phonon modes are a direct measure of the alloy composition and the built-in strain. For thin layers the lattice mismatch is found to be accommodated elastically, the layers are commensurate with the substrate.",

author = "H. Brugger and G. Abstreiter",

year = "1986",

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T1 - PHONON PROPERTIES OF Si//xGe//1// minus //x STRAINED OVERLAYERS ON (110) GaAs.

AU - Brugger, H.

AU - Abstreiter, G.

PY - 1986

Y1 - 1986

N2 - The epitaxial growth of Si//xGe//1// minus //x thin films on (110) GaAs cleavage surfaces is studied by Raman spectroscopy. The peak positions of the optical phonon modes are a direct measure of the alloy composition and the built-in strain. For thin layers the lattice mismatch is found to be accommodated elastically, the layers are commensurate with the substrate.

AB - The epitaxial growth of Si//xGe//1// minus //x thin films on (110) GaAs cleavage surfaces is studied by Raman spectroscopy. The peak positions of the optical phonon modes are a direct measure of the alloy composition and the built-in strain. For thin layers the lattice mismatch is found to be accommodated elastically, the layers are commensurate with the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0022942943&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022942943

SN - 2868830153

SP - 209

EP - 212

BT - Unknown Host Publication Title

A2 - Ploog, K.

A2 - Linh, N.T.

PB - Editions de Physique

ER -

PHONON PROPERTIES OF Si//xGe//1// minus //x STRAINED OVERLAYERS ON (110) GaAs.

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