Performance, power and cooling trade-offs with NCFET-based many-cores

Martin Rapp, Sami Salamin, Hussam Amrouch, Girish Pahwa, Yogesh Chauhan, Jörg Henkel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

23 Scopus citations


Negative Capacitance Field-Effect Transistor (NCFET) is an emerging technology that incorporates a ferroelectric layer within the transistor gate stack to overcome the fundamental limit of sub-threshold swing in transistors. Even though physics-based NCFET models have been recently proposed, system-level NCFET models do not exist and research is still in its infancy. In this work, we are the first to investigate the impact of NCFET on performance, energy and cooling costs in many-core processors. Our proposed methodology starts from accurate physics models all the way up to the system level, where the performance and power of a many-core are widely affected. Our new methodology and system-level models allow, for the first time, the exploration of the novel trade-offs between performance gains and power losses that NCFET now offers to system-level designers. We demonstrate that an optimal ferroelectric thickness does exist. In addition, we reveal that current state-of-the-art power management techniques fail when NCFET (with a thick ferroelectric layer) comes into play.

Original languageEnglish
Title of host publicationProceedings of the 56th Annual Design Automation Conference 2019, DAC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781450367257
StatePublished - 2 Jun 2019
Externally publishedYes
Event56th Annual Design Automation Conference, DAC 2019 - Las Vegas, United States
Duration: 2 Jun 20196 Jun 2019

Publication series

NameProceedings - Design Automation Conference
ISSN (Print)0738-100X


Conference56th Annual Design Automation Conference, DAC 2019
Country/TerritoryUnited States
CityLas Vegas


  • Emerging Technology
  • FinFET
  • Many-Cores
  • Negative Capacitance
  • Processor Performance


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