TY - GEN
T1 - Performance, power and cooling trade-offs with NCFET-based many-cores
AU - Rapp, Martin
AU - Salamin, Sami
AU - Amrouch, Hussam
AU - Pahwa, Girish
AU - Chauhan, Yogesh
AU - Henkel, Jörg
N1 - Publisher Copyright:
© 2019 ACM.
PY - 2019/6/2
Y1 - 2019/6/2
N2 - Negative Capacitance Field-Effect Transistor (NCFET) is an emerging technology that incorporates a ferroelectric layer within the transistor gate stack to overcome the fundamental limit of sub-threshold swing in transistors. Even though physics-based NCFET models have been recently proposed, system-level NCFET models do not exist and research is still in its infancy. In this work, we are the first to investigate the impact of NCFET on performance, energy and cooling costs in many-core processors. Our proposed methodology starts from accurate physics models all the way up to the system level, where the performance and power of a many-core are widely affected. Our new methodology and system-level models allow, for the first time, the exploration of the novel trade-offs between performance gains and power losses that NCFET now offers to system-level designers. We demonstrate that an optimal ferroelectric thickness does exist. In addition, we reveal that current state-of-the-art power management techniques fail when NCFET (with a thick ferroelectric layer) comes into play.
AB - Negative Capacitance Field-Effect Transistor (NCFET) is an emerging technology that incorporates a ferroelectric layer within the transistor gate stack to overcome the fundamental limit of sub-threshold swing in transistors. Even though physics-based NCFET models have been recently proposed, system-level NCFET models do not exist and research is still in its infancy. In this work, we are the first to investigate the impact of NCFET on performance, energy and cooling costs in many-core processors. Our proposed methodology starts from accurate physics models all the way up to the system level, where the performance and power of a many-core are widely affected. Our new methodology and system-level models allow, for the first time, the exploration of the novel trade-offs between performance gains and power losses that NCFET now offers to system-level designers. We demonstrate that an optimal ferroelectric thickness does exist. In addition, we reveal that current state-of-the-art power management techniques fail when NCFET (with a thick ferroelectric layer) comes into play.
KW - Emerging Technology
KW - FinFET
KW - Many-Cores
KW - NCFET
KW - Negative Capacitance
KW - Processor Performance
UR - http://www.scopus.com/inward/record.url?scp=85067831891&partnerID=8YFLogxK
U2 - 10.1145/3316781.3317880
DO - 10.1145/3316781.3317880
M3 - Conference contribution
AN - SCOPUS:85067831891
T3 - Proceedings - Design Automation Conference
BT - Proceedings of the 56th Annual Design Automation Conference 2019, DAC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 56th Annual Design Automation Conference, DAC 2019
Y2 - 2 June 2019 through 6 June 2019
ER -