Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors

Valentyn Solomko; Oguzhan Oezdamar; Robert Weigel; Amelie Hagelauer

doi:10.1109/OJAP.2021.3063528

Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors

Valentyn Solomko
, Oguzhan Oezdamar
, Robert Weigel
, Amelie Hagelauer

Infineon Technologies AG
Friedrich Alexander Universität Erlangen-Nürnberg
Universität Bayreuth

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.

Original language	English
Article number	9367280
Pages (from-to)	375-384
Number of pages	10
Journal	IEEE Open Journal of Antennas and Propagation
Volume	2
DOIs	https://doi.org/10.1109/OJAP.2021.3063528
State	Published - 2021
Externally published	Yes

Keywords

Antenna tuning
C-tuner
RF switch
aperture tuning
carrier aggregation
cellular user equipment
harmonics
high-voltage RF switch
inverted-F antenna
mobile handset
switchable capacitor
user terminal

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10.1109/OJAP.2021.3063528

Cite this

@article{48f36df06cb54c1785b22623463bb02c,

title = "Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors",

abstract = "A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95\% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.",

keywords = "Antenna tuning, C-tuner, RF switch, aperture tuning, carrier aggregation, cellular user equipment, harmonics, high-voltage RF switch, inverted-F antenna, mobile handset, switchable capacitor, user terminal",

author = "Valentyn Solomko and Oguzhan Oezdamar and Robert Weigel and Amelie Hagelauer",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.",

year = "2021",

doi = "10.1109/OJAP.2021.3063528",

language = "English",

volume = "2",

pages = "375--384",

journal = "IEEE Open Journal of Antennas and Propagation",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

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T1 - Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors

AU - Solomko, Valentyn

AU - Oezdamar, Oguzhan

AU - Weigel, Robert

AU - Hagelauer, Amelie

PY - 2021

Y1 - 2021

N2 - A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.

AB - A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.

KW - Antenna tuning

KW - C-tuner

KW - RF switch

KW - aperture tuning

KW - carrier aggregation

KW - cellular user equipment

KW - harmonics

KW - high-voltage RF switch

KW - inverted-F antenna

KW - mobile handset

KW - switchable capacitor

KW - user terminal

UR - https://www.scopus.com/pages/publications/85115897045

U2 - 10.1109/OJAP.2021.3063528

DO - 10.1109/OJAP.2021.3063528

M3 - Article

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SN - 2637-6431

VL - 2

SP - 375

EP - 384

JO - IEEE Open Journal of Antennas and Propagation

JF - IEEE Open Journal of Antennas and Propagation

M1 - 9367280

ER -

Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors

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Keywords

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