Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermüller; A. Deisenrieder; G. Abstreiter; K. Karrai; S. Grosse; S. Manus; J. Feldmann; H. Lipsanen; M. Sopanen; J. Ahopelto

doi:10.1063/1.124116

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A case of local illumination photoluminescence (PL) spectroscopy is reported in which the limitation of spatial resolution due to exciton diffusion can be relaxed by making use of Pauli blocking of the level filling in semiconductor quantum dots. The PL originating from the first three confined level of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution.

Original language	English
Pages (from-to)	3200-3202
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	21
DOIs	https://doi.org/10.1063/1.124116
State	Published - 24 May 1999

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title = "Pauli-blocking imaging of single strain-induced semiconductor quantum dots",

abstract = "A case of local illumination photoluminescence (PL) spectroscopy is reported in which the limitation of spatial resolution due to exciton diffusion can be relaxed by making use of Pauli blocking of the level filling in semiconductor quantum dots. The PL originating from the first three confined level of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution.",

author = "C. Oberm{\"u}ller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and S. Manus and J. Feldmann and H. Lipsanen and M. Sopanen and J. Ahopelto",

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T1 - Pauli-blocking imaging of single strain-induced semiconductor quantum dots

AU - Obermüller, C.

AU - Deisenrieder, A.

AU - Abstreiter, G.

AU - Karrai, K.

AU - Grosse, S.

AU - Manus, S.

AU - Feldmann, J.

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Ahopelto, J.

PY - 1999/5/24

Y1 - 1999/5/24

N2 - A case of local illumination photoluminescence (PL) spectroscopy is reported in which the limitation of spatial resolution due to exciton diffusion can be relaxed by making use of Pauli blocking of the level filling in semiconductor quantum dots. The PL originating from the first three confined level of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution.

AB - A case of local illumination photoluminescence (PL) spectroscopy is reported in which the limitation of spatial resolution due to exciton diffusion can be relaxed by making use of Pauli blocking of the level filling in semiconductor quantum dots. The PL originating from the first three confined level of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution.

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VL - 74

SP - 3200

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

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