TY - GEN
T1 - Pattern transfer process using innovative polymers in combined thermal and UV nanoimprint lithography (TUV-NIL)
AU - Brunetti, Francesca
AU - Harrer, Stefan
AU - Scarpa, Giuseppe
AU - Lugli, Paolo
AU - Kubenz, Mike
AU - Schuster, Christine
AU - Reuther, Freimut
PY - 2007
Y1 - 2007
N2 - We performed combined thermal and ultraviolet nanoimprint lithography (TUV-NIL) using a recently developed nanoimprint polymer (mr-NIL 6000 from Micro Resist technology GmbH) and achieved an imprinted feature size of 50 nm. We used commercially available 2-inch-diameter transparent quartz molds (NIL Technology, Denmark and Obducat, Sweden) comprising 150 nm to 190 nm-deep features of various shapes and aspect ratios with lateral dimensions ranging between 50 nm and 300 nm. The imprint polymer was spun onto a silicon substrate, covered with an oxide layer. After the TUV-NIL step, residual polymer layers at the bottom of the imprinted features were removed by oxygen plasma etching. Imprinted patterns were then transferred into the silicon oxide layer underneath by reactive ion etching (RE). In a final step the residual polymer was stripped off the silicon oxide surface in an oxygen asher. All imprinted features as well as the corresponding pattern transfer results showed good surface and sidewall characteristics.
AB - We performed combined thermal and ultraviolet nanoimprint lithography (TUV-NIL) using a recently developed nanoimprint polymer (mr-NIL 6000 from Micro Resist technology GmbH) and achieved an imprinted feature size of 50 nm. We used commercially available 2-inch-diameter transparent quartz molds (NIL Technology, Denmark and Obducat, Sweden) comprising 150 nm to 190 nm-deep features of various shapes and aspect ratios with lateral dimensions ranging between 50 nm and 300 nm. The imprint polymer was spun onto a silicon substrate, covered with an oxide layer. After the TUV-NIL step, residual polymer layers at the bottom of the imprinted features were removed by oxygen plasma etching. Imprinted patterns were then transferred into the silicon oxide layer underneath by reactive ion etching (RE). In a final step the residual polymer was stripped off the silicon oxide surface in an oxygen asher. All imprinted features as well as the corresponding pattern transfer results showed good surface and sidewall characteristics.
UR - http://www.scopus.com/inward/record.url?scp=70349902988&partnerID=8YFLogxK
U2 - 10.1557/proc-1002-n03-01
DO - 10.1557/proc-1002-n03-01
M3 - Conference contribution
AN - SCOPUS:70349902988
SN - 9781605604367
T3 - Materials Research Society Symposium Proceedings
SP - 1
EP - 6
BT - Materials Research Society Symposium Proceedings - Printing Methods for Electronic, Photonics and Biomaterials
PB - Materials Research Society
T2 - Printing Methods for Electronic, Photonics and Biomaterials - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2009
ER -