Passivation of boron in diamond by deuterium

R. Zeisel, C. E. Nebel, M. Stutzmann

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The capacitance-voltage measurements were performed on deuterated boron-doped synthetic-type diamond. The measurements represents the electrical passivation of the boron acceptors manifested by a persistent decrease in capacitance after deuteration. The capacitance-voltage dependence is explained by means of a two-layer depletion width model.

Original languageEnglish
Pages (from-to)1875-1876
Number of pages2
JournalApplied Physics Letters
Issue number13
StatePublished - 29 Mar 1999


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