TY - GEN
T1 - Partial Discharges under DC Voltage Stress Simulation and Measurement
AU - Hofer, L.
AU - Kindersberger, J.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - The interpretation of the partial discharge measurements under DC voltage stress requires understanding of the relevant physical phenomena. In this paper both the charge accumulation on the interface of the void and the appearance of the initial electron are discussed. Partial discharge measurements on a stacked three-layered arrangement with a defined void is provided. The presentation and discussion of the measured data is followed by the introduction of a simulation model. The comparison of both simulated and measured results completes the paper.
AB - The interpretation of the partial discharge measurements under DC voltage stress requires understanding of the relevant physical phenomena. In this paper both the charge accumulation on the interface of the void and the appearance of the initial electron are discussed. Partial discharge measurements on a stacked three-layered arrangement with a defined void is provided. The presentation and discussion of the measured data is followed by the introduction of a simulation model. The comparison of both simulated and measured results completes the paper.
UR - https://www.scopus.com/pages/publications/85063099592
U2 - 10.1109/ICHVE.2018.8641938
DO - 10.1109/ICHVE.2018.8641938
M3 - Conference contribution
AN - SCOPUS:85063099592
T3 - ICHVE 2018 - 2018 IEEE International Conference on High Voltage Engineering and Application
BT - ICHVE 2018 - 2018 IEEE International Conference on High Voltage Engineering and Application
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE International Conference on High Voltage Engineering and Application, ICHVE 2018
Y2 - 10 September 2018 through 13 September 2018
ER -