Paramagnetic defects of silicon nanowires

A. Baumer, M. Stutzmann, M. S. Brandt, F. C.K. Au, S. T. Lee

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Conventional electron spin resonance spectroscopy was used to analyze the paramagnetic defects in and on silicon nanowires (SiNW) obtained by oxide-assisted growth. Raw materials were dissolved in dichloromethane by ultrasonification and spread on a quartz glass substrate, followed by evaporation of the solvent to obtain thin layers of SiNWs. The spectra were collected over the range of 8000-400 cm-1. The optical absorption spectra of SiNW were found to be comparable to those of microcrystalline silicon and showed a similar decrease of defect density upon H termination.

Original languageEnglish
Pages (from-to)943-945
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - 9 Aug 2004


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