Paramagnetic defects of silicon nanowires

A. Baumer; M. Stutzmann; M. S. Brandt; F. C.K. Au; S. T. Lee

doi:10.1063/1.1775288

Paramagnetic defects of silicon nanowires

A. Baumer, M. Stutzmann, M. S. Brandt, F. C.K. Au, S. T. Lee

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Conventional electron spin resonance spectroscopy was used to analyze the paramagnetic defects in and on silicon nanowires (SiNW) obtained by oxide-assisted growth. Raw materials were dissolved in dichloromethane by ultrasonification and spread on a quartz glass substrate, followed by evaporation of the solvent to obtain thin layers of SiNWs. The spectra were collected over the range of 8000-400 cm^-1. The optical absorption spectra of SiNW were found to be comparable to those of microcrystalline silicon and showed a similar decrease of defect density upon H termination.

Original language	English
Pages (from-to)	943-945
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	6
DOIs	https://doi.org/10.1063/1.1775288
State	Published - 9 Aug 2004

Access to Document

10.1063/1.1775288

Cite this

@article{363499a8989343a1b4ffcc6fcf61c374,

title = "Paramagnetic defects of silicon nanowires",

abstract = "Conventional electron spin resonance spectroscopy was used to analyze the paramagnetic defects in and on silicon nanowires (SiNW) obtained by oxide-assisted growth. Raw materials were dissolved in dichloromethane by ultrasonification and spread on a quartz glass substrate, followed by evaporation of the solvent to obtain thin layers of SiNWs. The spectra were collected over the range of 8000-400 cm-1. The optical absorption spectra of SiNW were found to be comparable to those of microcrystalline silicon and showed a similar decrease of defect density upon H termination.",

author = "A. Baumer and M. Stutzmann and Brandt, {M. S.} and Au, {F. C.K.} and Lee, {S. T.}",

year = "2004",

month = aug,

day = "9",

doi = "10.1063/1.1775288",

language = "English",

volume = "85",

pages = "943--945",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Paramagnetic defects of silicon nanowires

AU - Baumer, A.

AU - Stutzmann, M.

AU - Brandt, M. S.

AU - Au, F. C.K.

AU - Lee, S. T.

PY - 2004/8/9

Y1 - 2004/8/9

N2 - Conventional electron spin resonance spectroscopy was used to analyze the paramagnetic defects in and on silicon nanowires (SiNW) obtained by oxide-assisted growth. Raw materials were dissolved in dichloromethane by ultrasonification and spread on a quartz glass substrate, followed by evaporation of the solvent to obtain thin layers of SiNWs. The spectra were collected over the range of 8000-400 cm-1. The optical absorption spectra of SiNW were found to be comparable to those of microcrystalline silicon and showed a similar decrease of defect density upon H termination.

AB - Conventional electron spin resonance spectroscopy was used to analyze the paramagnetic defects in and on silicon nanowires (SiNW) obtained by oxide-assisted growth. Raw materials were dissolved in dichloromethane by ultrasonification and spread on a quartz glass substrate, followed by evaporation of the solvent to obtain thin layers of SiNWs. The spectra were collected over the range of 8000-400 cm-1. The optical absorption spectra of SiNW were found to be comparable to those of microcrystalline silicon and showed a similar decrease of defect density upon H termination.

UR - http://www.scopus.com/inward/record.url?scp=4344672595&partnerID=8YFLogxK

U2 - 10.1063/1.1775288

DO - 10.1063/1.1775288

M3 - Article

AN - SCOPUS:4344672595

SN - 0003-6951

VL - 85

SP - 943

EP - 945

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Paramagnetic defects of silicon nanowires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this