P-type transparent conducting oxide protection layers for sustainable photoelectrochemical water oxidation

Le Chen, Jinhui Yang, Lyman J. Lee, Shannon Klaus, Rachel Woods-Robinson, Yanwei Lum, Jason K. Cooper, Ian D. Sharp, Alexis T. Bell, Joel W. Ager

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we propose that a p-type transparent conducting oxide (p-TCO) can function as a selective hole contact and corrosion protection layer on photoanodes used for light-driven water oxidation. To prove the concept, NiCo2O4 was used as the p-TCO for n-Si protection in alkaline condition, and we show that this material has the requisite electronic structure, stability, transparency, and hole conductivity to achieve sustained and efficient solar water oxidation. The photoelectrochemical performance demonstrates the attractive combination of transparency and low-resistance hole conductivity in the NiCo2O4. Long-term testing indicates multi-day stability with minimal decrease in performance or observable corrosion of the Si photoanode. This works suggests that p-TCOs are promising as corrosion protection layers for stable water oxidation photoanodes.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 6
EditorsC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. P. Lynch, P. M. Vereecken, H. Wang, O. M. Leonte
PublisherElectrochemical Society Inc.
Pages115-118
Number of pages4
Edition6
ISBN (Electronic)9781607685968
DOIs
StatePublished - 2015
Externally publishedYes
EventSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting - Chicago, United States
Duration: 24 May 201528 May 2015

Publication series

NameECS Transactions
Number6
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period24/05/1528/05/15

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