TY - JOUR
T1 - Oxygen adsorption on honeycomb BC2N monolayers
AU - Gökoǧlu, Gökhan
AU - Aktürk, Ethem
N1 - Funding Information:
This research was supported in part by TÜBİTAK (The Scientific & Technological Research Council of Turkey) through TR-Grid e-Infrastructure Project, part of the calculations have been carried out at ULAKBİM Computer Center.
PY - 2013
Y1 - 2013
N2 - We present the electronic structure and energetics of atomic oxygen adsorption on graphene-like BC2N honeycomb monolayers in view of density functional calculations using GGA scheme. After the geometry optimization of bare BC2N monolayer, we consider eight initial configuration for binding of atomic oxygen. As initial configurations, atomic oxygen is located ≈1Å above the following sites; mid of the B-N, B-C, C-C, N-C bonds, B, N, C atoms, and hollow of the hexagonal cell. Among the bare structures, type-II is determined as the most stable structure energetically. This can be conceived by visualization of electronic environments of each atom, since type-II geometry optimizes the number of C-C and B-N bonds. When the oxygenated structure is concerned, atomic oxygen is located at the bridge site of B-C bond of type-II geometry yielding most favorable structure energetically. The adsorption energies and reaction paths of oxygen are also investigated. The results show that the oxygenation of type-I structure induces a semiconducting band gap, while semiconducting nature of type-II and type-III is preserved under oxygen adsorption.
AB - We present the electronic structure and energetics of atomic oxygen adsorption on graphene-like BC2N honeycomb monolayers in view of density functional calculations using GGA scheme. After the geometry optimization of bare BC2N monolayer, we consider eight initial configuration for binding of atomic oxygen. As initial configurations, atomic oxygen is located ≈1Å above the following sites; mid of the B-N, B-C, C-C, N-C bonds, B, N, C atoms, and hollow of the hexagonal cell. Among the bare structures, type-II is determined as the most stable structure energetically. This can be conceived by visualization of electronic environments of each atom, since type-II geometry optimizes the number of C-C and B-N bonds. When the oxygenated structure is concerned, atomic oxygen is located at the bridge site of B-C bond of type-II geometry yielding most favorable structure energetically. The adsorption energies and reaction paths of oxygen are also investigated. The results show that the oxygenation of type-I structure induces a semiconducting band gap, while semiconducting nature of type-II and type-III is preserved under oxygen adsorption.
KW - Atomic adsorption
KW - Electronic structure calculations
KW - Low dimensional structures
UR - http://www.scopus.com/inward/record.url?scp=84878276202&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2013.05.023
DO - 10.1016/j.matlet.2013.05.023
M3 - Article
AN - SCOPUS:84878276202
SN - 0167-577X
VL - 106
SP - 168
EP - 170
JO - Materials Letters
JF - Materials Letters
ER -