Abstract
The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200 °C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.
Original language | English |
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Pages (from-to) | 39-44 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 482 |
DOIs | |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1 Dec 1997 → 4 Dec 1997 |