Organoindium azides: New precursors to indium nitride

Roland A. Fischer; Harald Sussek; Alexander Miehr; Hans Pritzkow; Eberhard Herdtweck

doi:10.1016/S0022-328X(97)00333-1

Organoindium azides: New precursors to indium nitride

Roland A. Fischer
, Harald Sussek
, Alexander Miehr
, Hans Pritzkow
, Eberhard Herdtweck

Heidelberg University
Technical University of Munich

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF₃SO₃)In[(CH₂)₃NMe₂)]₂(μ-N₃)In[(CH₂)₃NMe₂)]₂}_∝ (2) and the polymeric monoazide {(N₃)In[(CH₂)₃NMe₂)]₂} (3) are reported. Some aspects of the precursor chemistry of 1-3 related to the synthesis of InN thin films are discussed, with special emphasis on the aspect of the accessible chemical purity of the precursors. Compound 3 allowed the growth of crystalline InN thin films at 300-450°C in the absence of ammonia using the technique of organometallic chemical vapor deposition.

Original language	English
Pages (from-to)	73-82
Number of pages	10
Journal	Journal of Organometallic Chemistry
Volume	548
Issue number	1
DOIs	https://doi.org/10.1016/S0022-328X(97)00333-1
State	Published - 5 Dec 1997
Externally published	Yes

Keywords

Azides
Indium
Indium nitride
MOCVD
Thin films

Access to Document

10.1016/S0022-328X(97)00333-1

Cite this

@article{8b1bc972e76547deb031201eb4ed9645,

title = "Organoindium azides: New precursors to indium nitride",

abstract = "The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer \{(CF3SO3)In[(CH2)3NMe2)]2(μ-N3)In[(CH2)3NMe2)]2\}∝ (2) and the polymeric monoazide \{(N3)In[(CH2)3NMe2)]2\} (3) are reported. Some aspects of the precursor chemistry of 1-3 related to the synthesis of InN thin films are discussed, with special emphasis on the aspect of the accessible chemical purity of the precursors. Compound 3 allowed the growth of crystalline InN thin films at 300-450°C in the absence of ammonia using the technique of organometallic chemical vapor deposition.",

keywords = "Azides, Indium, Indium nitride, MOCVD, Thin films",

author = "Fischer, \{Roland A.\} and Harald Sussek and Alexander Miehr and Hans Pritzkow and Eberhard Herdtweck",

year = "1997",

month = dec,

day = "5",

doi = "10.1016/S0022-328X(97)00333-1",

language = "English",

volume = "548",

pages = "73--82",

journal = "Journal of Organometallic Chemistry",

issn = "0022-328X",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Organoindium azides

T2 - New precursors to indium nitride

AU - Fischer, Roland A.

AU - Sussek, Harald

AU - Miehr, Alexander

AU - Pritzkow, Hans

AU - Herdtweck, Eberhard

PY - 1997/12/5

Y1 - 1997/12/5

N2 - The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF3SO3)In[(CH2)3NMe2)]2(μ-N3)In[(CH2)3NMe2)]2}∝ (2) and the polymeric monoazide {(N3)In[(CH2)3NMe2)]2} (3) are reported. Some aspects of the precursor chemistry of 1-3 related to the synthesis of InN thin films are discussed, with special emphasis on the aspect of the accessible chemical purity of the precursors. Compound 3 allowed the growth of crystalline InN thin films at 300-450°C in the absence of ammonia using the technique of organometallic chemical vapor deposition.

AB - The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF3SO3)In[(CH2)3NMe2)]2(μ-N3)In[(CH2)3NMe2)]2}∝ (2) and the polymeric monoazide {(N3)In[(CH2)3NMe2)]2} (3) are reported. Some aspects of the precursor chemistry of 1-3 related to the synthesis of InN thin films are discussed, with special emphasis on the aspect of the accessible chemical purity of the precursors. Compound 3 allowed the growth of crystalline InN thin films at 300-450°C in the absence of ammonia using the technique of organometallic chemical vapor deposition.

KW - Azides

KW - Indium

KW - Indium nitride

KW - MOCVD

KW - Thin films

UR - https://www.scopus.com/pages/publications/0031555459

U2 - 10.1016/S0022-328X(97)00333-1

DO - 10.1016/S0022-328X(97)00333-1

M3 - Article

AN - SCOPUS:0031555459

SN - 0022-328X

VL - 548

SP - 73

EP - 82

JO - Journal of Organometallic Chemistry

JF - Journal of Organometallic Chemistry

IS - 1

ER -

Organoindium azides: New precursors to indium nitride

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this