Abstract
Novel, mixed substituted organogallium compounds of the type (R1)(R2)Ga[(CH2)3NR2] (R1, R2 Cl, BH4, alkyl, (η5-C5H5)(CO)2Fe; R CH3, C2H5) have been synthesized and fully characterized. These compounds are stabilized by intramolecular adduct formation at the gallium centre. The solid state structures of [(η5-C5H5)(CO)2]FeGa[(CH2)3N(CH3)2](R1) (3a: R1 C2H5; 3d: R1 BH4) exhibit FeGa bond lengths of 245.65(4) pm and 237.5(1) pm respectively. The GaB distance in 3d amounts to 237.4(3) pm. Remarkably pure Fe/Ga thin films were grown from 3d by low pressure OMCVD. The BH4 group reduces both the decomposition temperature of the single source precursor and the degree of contamination by carbon of the mixed metal thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 65-71 |
| Number of pages | 7 |
| Journal | Journal of Organometallic Chemistry |
| Volume | 459 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - 19 Oct 1993 |
Fingerprint
Dive into the research topics of 'Organo Group 13 metal complexes of d-block elements. VII. Stable organogalliumtetrahydroborates: Novel precursors for the deposition of gallium-containing mixed metal thin films'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver