Optoelectronics of topological surfaces

P. B. Seifert, C. W. Kastl, A. W. Holleitner

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations

Abstract

In the bulk, a three-dimensional topological insulator behaves like an ordinary band-insulator. At the surface, however, the topological quantum phase difference leads to conducting states, which have a helical Dirac dispersion. Available topological insulators such as Sb2Te3, Bi2Se3, and Bi2Te3 are low-bandgap semiconductors, which suffer from unintended bulk doping. One major challenge in this field is to obtain and characterize pure surface conductivity at room temperature. In this article, we discuss the possibility to use optoelectronic techniques to characterize, control, and read-out the surface states of three-dimensional topological insulators.

Original languageEnglish
Title of host publicationEncyclopedia of Interfacial Chemistry
Subtitle of host publicationSurface Science and Electrochemistry
PublisherElsevier
Pages525-534
Number of pages10
ISBN (Electronic)9780128098943
ISBN (Print)9780128097397
DOIs
StatePublished - 1 Jan 2018

Keywords

  • Long-range photoresponse
  • Optoelectronic dynamics
  • Photogalvanic currents
  • Photothermoelectric effect
  • Topological insulator

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