Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

Fabian Schuster, Martin Hetzl, Saskia Weiszer, Marco Wolfer, Hiromitsu Kato, Christoph E. Nebel, Jose A. Garrido, Martin Stutzmann

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

Original languageEnglish
Article number154303
JournalJournal of Applied Physics
Volume118
Issue number15
DOIs
StatePublished - 21 Oct 2015

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