TY - GEN
T1 - Optoelectronic high accurary setup for the analysis of internal temperature and carrier profiles in semiconductor power devices
AU - Schrag, G.
AU - Korzenietz, A.
AU - Oberndorfer, J.
AU - Wachutka, G.
PY - 2014
Y1 - 2014
N2 - We continued the development of a high accuracy measurement set-up that enables the time-resolved analysis of carrier densities and temperature profiles in the interior of semiconductor power devices. From these primary quantities other characteristic device parameters like carrier lifetimes and carrier diffusion lengths are extracted. The experiment exploits the so-called mirage effect as described in [1,3]. Compared to earlier versions, it has been enhanced towards higher precision and stability of the measured data by improving and stabilizing the optical features and the control of external temperature. Owing to the improved experimental set-up and data processing, we are now able to quantitatively investigate ambient temperature and self-heating effects in high power devices, which constitutes a valuable supplement to the data base required for predictive and reliable computer simulation.
AB - We continued the development of a high accuracy measurement set-up that enables the time-resolved analysis of carrier densities and temperature profiles in the interior of semiconductor power devices. From these primary quantities other characteristic device parameters like carrier lifetimes and carrier diffusion lengths are extracted. The experiment exploits the so-called mirage effect as described in [1,3]. Compared to earlier versions, it has been enhanced towards higher precision and stability of the measured data by improving and stabilizing the optical features and the control of external temperature. Owing to the improved experimental set-up and data processing, we are now able to quantitatively investigate ambient temperature and self-heating effects in high power devices, which constitutes a valuable supplement to the data base required for predictive and reliable computer simulation.
UR - https://www.scopus.com/pages/publications/84905439678
U2 - 10.1109/ISPSD.2014.6855998
DO - 10.1109/ISPSD.2014.6855998
M3 - Conference contribution
AN - SCOPUS:84905439678
SN - 9781479929177
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 151
EP - 154
BT - Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Y2 - 15 June 2014 through 19 June 2014
ER -