Optimizing GaAs/AlGaAs growth on GaAs (111)B for enhanced nonlinear efficiency in quantum optical metasurfaces

This study is an optimization of GaAs and Al_0.55Ga_0.45As growth on GaAs(111)B substrates with a surface misorientation of 2 ° toward [ 2 ¯ 11], aiming to enhance surface morphology. For quantum optical metasurfaces (QOMs), the change from (001) growth to (111) growth will increase the efficiency of the nonlinear process of spontaneous parametric downconversion. This work identifies key factors affecting surface roughness, including the detrimental effects of traditional thermal oxide desorption, which prevented the growth of smooth surfaces. A novel Ga-assisted oxide desorption method using Ga flux “pulses” was developed, successfully removing oxides while preserving surface quality. In situ characterization techniques, including reflection high energy electron diffraction and a novel technique called diffuse laser scattering, were employed to monitor and control the oxide removal process. Mounting quarter wafers with sapphire substrates as optical diffusers improved surface uniformity by mitigating temperature gradients. The uniformity of the growths was clearly visualized by an in-house technique called black box scattering imaging. Indium (In) was tested as a surfactant to promote step-flow growth in GaAs, which resulted in atomic-scale flatness with root mean square (RMS) roughness as low as 0.256 nm. In combination with a higher growth temperature, the RMS roughness of Al 0.55 Ga 0.45 As layers was reduced to 0.302 nm. The optimized growth methods achieved acceptable roughness levels for QOM fabrication, with ongoing efforts to apply these techniques to various devices based on GaAs/AlGaAs heterostructures with (111) orientation.