Abstract
The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for the optimization of the optical setup and the sample geometries which minimize the unavoidable experimental errors are presented.
| Original language | English |
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| Pages | 249-252 |
| Number of pages | 4 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA Duration: 6 Sep 2000 → 8 Sep 2000 |
Conference
| Conference | International Conference on Simulation of Semiconductor Processes and Devices |
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| City | Seattle, WA, USA |
| Period | 6/09/00 → 8/09/00 |