Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications

M. Holz, O. Kronenwerth, D. Grundler

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with the experimental data. In particular, we investigate the important effect of the contact resistance ρc between the semiconductor and the metal on the EMR effect. Introducing a realistic ρc=3.5×10-7Ω cm2 in our model we find that at room temperature this reduces the EMR by 30% if compared to an analysis where ρc is not considered.

Original languageEnglish
Pages (from-to)897-900
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
StatePublished - Mar 2004
Externally publishedYes
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 14 Jul 200318 Jul 2003

Keywords

  • Contact resistance
  • EMR
  • Magnetic sensors
  • Magnetoresistance

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