Optimization of erbium-doped light-emitting diodes by p-type counterdoping

E. Neufeld; M. Markmann; A. Vörckel; K. Brunner; G. Abstreiter

doi:10.1063/1.124469

Optimization of erbium-doped light-emitting diodes by p-type counterdoping

E. Neufeld, M. Markmann, A. Vörckel, K. Brunner, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The influence of the space charge region width in erbium- and oxygen-doped silicon light emitting diodes on the electroluminescence (EL) power at 1.54 μm under reversed bias conditions is reported. The space charge region was varied by codoping the Si:Er:O layer with boron, thereby compensating the Er-O donors. A strong enhancement of the EL power with increasing width was observed. The existence of a dark region of approximately 45 nm in the pn junction is deduced, in which no light is generated due to a lack of hot carriers which are necessary for impact excitation of Er³⁺ ions.

Original language	English
Pages (from-to)	647-649
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	5
DOIs	https://doi.org/10.1063/1.124469
State	Published - 2 Aug 1999

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abstract = "The influence of the space charge region width in erbium- and oxygen-doped silicon light emitting diodes on the electroluminescence (EL) power at 1.54 μm under reversed bias conditions is reported. The space charge region was varied by codoping the Si:Er:O layer with boron, thereby compensating the Er-O donors. A strong enhancement of the EL power with increasing width was observed. The existence of a dark region of approximately 45 nm in the pn junction is deduced, in which no light is generated due to a lack of hot carriers which are necessary for impact excitation of Er3+ ions.",

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AU - Neufeld, E.

AU - Markmann, M.

AU - Vörckel, A.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 1999/8/2

Y1 - 1999/8/2

N2 - The influence of the space charge region width in erbium- and oxygen-doped silicon light emitting diodes on the electroluminescence (EL) power at 1.54 μm under reversed bias conditions is reported. The space charge region was varied by codoping the Si:Er:O layer with boron, thereby compensating the Er-O donors. A strong enhancement of the EL power with increasing width was observed. The existence of a dark region of approximately 45 nm in the pn junction is deduced, in which no light is generated due to a lack of hot carriers which are necessary for impact excitation of Er3+ ions.

AB - The influence of the space charge region width in erbium- and oxygen-doped silicon light emitting diodes on the electroluminescence (EL) power at 1.54 μm under reversed bias conditions is reported. The space charge region was varied by codoping the Si:Er:O layer with boron, thereby compensating the Er-O donors. A strong enhancement of the EL power with increasing width was observed. The existence of a dark region of approximately 45 nm in the pn junction is deduced, in which no light is generated due to a lack of hot carriers which are necessary for impact excitation of Er3+ ions.

UR - https://www.scopus.com/pages/publications/0032614630

U2 - 10.1063/1.124469

DO - 10.1063/1.124469

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SP - 647

EP - 649

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Optimization of erbium-doped light-emitting diodes by p-type counterdoping

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