Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

E. Verbitskaya; M. Abreu; V. Bartsch; W. Bell; P. Berglund; J. Bol; W. De Boer; K. Borer; S. Buontempo; L. Casagrande; S. Chapuy; V. Cindro; N. D'Ambrosio; C. Da Viá; S. R.H. Devine; B. Dezillie; A. Dierlamn; Z. Dimcovski; V. Eremin; A. Esposito; V. Granata; E. Grigoriev; F. Hauler; S. Janos; L. Jungermann; I. Konorov; Z. Li; C. Lourenço; M. Mikuz; T. O. Niinikoski; V. O'Shea; S. Pagano; V. G. Palmieri; S. Paul; P. Rato Mendes; G. Ruggiero; L. Schmitt; K. Smith; P. Sousa; M. Zavrtanik

doi:10.1109/TNS.2002.998650

Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

E. Verbitskaya
, M. Abreu
, V. Bartsch
, W. Bell
, P. Berglund
, J. Bol
, W. De Boer
, K. Borer
, S. Buontempo
, L. Casagrande
, S. Chapuy
, V. Cindro
, N. D'Ambrosio
, C. Da Viá
, S. R.H. Devine
, B. Dezillie
, A. Dierlamn
, Z. Dimcovski
, V. Eremin
, A. Esposito

V. Granata, E. Grigoriev, F. Hauler, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, T. O. Niinikoski, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, P. Rato Mendes, G. Ruggiero, L. Schmitt, K. Smith, P. Sousa, M. Zavrtanik

Chair of Physics I

The Russian Academy of Sciences
University of Algarve
University of Glasgow
Helsinki University of Technology
University of Karlsruhe
University of Bern
INFN Sezione di Napoli
European Organization for Nuclear Research
University of Geneva
Jožef Stefan Institute
Brunel University London
Brookhaven National Laboratory
Technical University of Munich
Instiuto di Cibernetica E. Caianiello

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 10¹⁴ to 5 · 10¹⁵ cm^-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection.

Original language	English
Pages (from-to)	258-263
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	49
Issue number	1 II
DOIs	https://doi.org/10.1109/TNS.2002.998650
State	Published - Feb 2002

Keywords

Cryogenic detectors
Electric field
Injection
Radiation-induced defects
Silicon

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10.1109/TNS.2002.998650

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Verbitskaya, E., Abreu, M., Bartsch, V., Bell, W., Berglund, P., Bol, J., De Boer, W., Borer, K., Buontempo, S., Casagrande, L., Chapuy, S., Cindro, V., D'Ambrosio, N., Da Viá, C., Devine, S. R. H., Dezillie, B., Dierlamn, A., Dimcovski, Z., Eremin, V., ... Zavrtanik, M. (2002). Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures. IEEE Transactions on Nuclear Science, 49(1 II), 258-263. https://doi.org/10.1109/TNS.2002.998650

@article{6db2153dc5e044dab2ab19bcac8b3d81,

title = "Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures",

abstract = "We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 1014 to 5 · 1015 cm-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection.",

keywords = "Cryogenic detectors, Electric field, Injection, Radiation-induced defects, Silicon",

author = "E. Verbitskaya and M. Abreu and V. Bartsch and W. Bell and P. Berglund and J. Bol and \{De Boer\}, W. and K. Borer and S. Buontempo and L. Casagrande and S. Chapuy and V. Cindro and N. D'Ambrosio and \{Da Vi{\'a}\}, C. and Devine, \{S. R.H.\} and B. Dezillie and A. Dierlamn and Z. Dimcovski and V. Eremin and A. Esposito and V. Granata and E. Grigoriev and F. Hauler and S. Janos and L. Jungermann and I. Konorov and Z. Li and C. Louren{\c c}o and M. Mikuz and Niinikoski, \{T. O.\} and V. O'Shea and S. Pagano and Palmieri, \{V. G.\} and S. Paul and \{Rato Mendes\}, P. and G. Ruggiero and L. Schmitt and K. Smith and P. Sousa and M. Zavrtanik",

year = "2002",

month = feb,

doi = "10.1109/TNS.2002.998650",

language = "English",

volume = "49",

pages = "258--263",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1 II",

}

Verbitskaya, E, Abreu, M, Bartsch, V, Bell, W, Berglund, P, Bol, J, De Boer, W, Borer, K, Buontempo, S, Casagrande, L, Chapuy, S, Cindro, V, D'Ambrosio, N, Da Viá, C, Devine, SRH, Dezillie, B, Dierlamn, A, Dimcovski, Z, Eremin, V, Esposito, A, Granata, V, Grigoriev, E, Hauler, F, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, TO, O'Shea, V, Pagano, S, Palmieri, VG, Paul, S, Rato Mendes, P, Ruggiero, G, Schmitt, L, Smith, K, Sousa, P & Zavrtanik, M 2002, 'Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures', IEEE Transactions on Nuclear Science, vol. 49, no. 1 II, pp. 258-263. https://doi.org/10.1109/TNS.2002.998650

TY - JOUR

T1 - Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

AU - Verbitskaya, E.

AU - Abreu, M.

AU - Bartsch, V.

AU - Bell, W.

AU - Berglund, P.

AU - Bol, J.

AU - De Boer, W.

AU - Borer, K.

AU - Buontempo, S.

AU - Casagrande, L.

AU - Chapuy, S.

AU - Cindro, V.

AU - D'Ambrosio, N.

AU - Da Viá, C.

AU - Devine, S. R.H.

AU - Dezillie, B.

AU - Dierlamn, A.

AU - Dimcovski, Z.

AU - Eremin, V.

AU - Esposito, A.

AU - Granata, V.

AU - Grigoriev, E.

AU - Hauler, F.

AU - Janos, S.

AU - Jungermann, L.

AU - Konorov, I.

AU - Li, Z.

AU - Lourenço, C.

AU - Mikuz, M.

AU - Niinikoski, T. O.

AU - O'Shea, V.

AU - Pagano, S.

AU - Palmieri, V. G.

AU - Paul, S.

AU - Rato Mendes, P.

AU - Ruggiero, G.

AU - Schmitt, L.

AU - Smith, K.

AU - Sousa, P.

AU - Zavrtanik, M.

PY - 2002/2

Y1 - 2002/2

N2 - We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 1014 to 5 · 1015 cm-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection.

AB - We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 1014 to 5 · 1015 cm-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection.

KW - Cryogenic detectors

KW - Electric field

KW - Injection

KW - Radiation-induced defects

KW - Silicon

UR - https://www.scopus.com/pages/publications/0036464369

U2 - 10.1109/TNS.2002.998650

DO - 10.1109/TNS.2002.998650

M3 - Article

AN - SCOPUS:0036464369

SN - 0018-9499

VL - 49

SP - 258

EP - 263

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 1 II

ER -

Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

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Keywords

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