Optically induced transport properties of freely suspended semiconductor submicron channels

C. Rossler; K. D. Hof; S. Manus; S. Ludwig; J. P. Kotthaus; J. Simon; A. W. Holleitner; D. Schuh; W. Wegscheider

doi:10.1063/1.2970035

Optically induced transport properties of freely suspended semiconductor submicron channels

C. Rossler
, K. D. Hof
, S. Manus
, S. Ludwig
, J. P. Kotthaus
, J. Simon
, A. W. Holleitner
, D. Schuh
, W. Wegscheider

Chair of Nanotechnology and Nanomaterials

University of Munich
Walter Schottky Institut
University of Regensburg

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAsGaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1-10 ms.

Original language	English
Article number	071107
Journal	Applied Physics Letters
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.2970035
State	Published - 2008

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10.1063/1.2970035

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title = "Optically induced transport properties of freely suspended semiconductor submicron channels",

abstract = "We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAsGaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1-10 ms.",

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AU - Rossler, C.

AU - Hof, K. D.

AU - Manus, S.

AU - Ludwig, S.

AU - Kotthaus, J. P.

AU - Simon, J.

AU - Holleitner, A. W.

AU - Schuh, D.

AU - Wegscheider, W.

PY - 2008

Y1 - 2008

N2 - We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAsGaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1-10 ms.

AB - We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAsGaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1-10 ms.

UR - https://www.scopus.com/pages/publications/50249110013

U2 - 10.1063/1.2970035

DO - 10.1063/1.2970035

M3 - Article

AN - SCOPUS:50249110013

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071107

ER -

Optically induced transport properties of freely suspended semiconductor submicron channels

Abstract

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